BTS410F2 E3043

BTS410F2 E3043 Datasheet


BTS 410 F2

Part Datasheet
BTS410F2 E3043 BTS410F2 E3043 BTS410F2 E3043 (pdf)
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BTS 410 F2

Smart Highside Power Switch
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge ESD protection

Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation

Vbb AZ Vbb on RON IL ISO IL SCr

TO-220AB/5
5 Standard
1 Straight leads

Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
65 V 42 V
220 A

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart technology. Providing embedded protective functions.

Voltage source

V Logic Voltage sensor

Logic

Overvoltage protection

Current limit

Gate protection
+ Vbb 3

Charge pump Level shifter

Rectifier

Limit for unclamped ind. loads

Open load detection

Temperature sensor

Load

Short circuit detection

Signal GND

Load GND

Semiconductor Group
1 of 15
2003-Oct-01

BTS 410 F2

Function
- Logic ground

I Input, activates the power switch in case of logical high signal
+ Positive power supply voltage,
the tab is shorted to this pin

S Diagnostic feedback, low on failure

O Output to the load
Package and Ordering Code

All dimensions in mm

Standard TO-220AB/5
Ordering code

BTS 410 F2

Q67060-S6103-A2

BTS 410 F2
SMD TO-220AB/5, Opt. E3062 Ordering code

BTS410F2 E3062A T&R Q67060-S6103-A4
TO-220AB/5, Option E3043 Ordering code

BTS 410 F2 E3043

Q67060-S6103-A3

Changed since Date Change

Mar. EAS maximum rating and diagram 1997 and ZthJC diagram added

ESD capability except Input specified to 2kV, RthJA SMD specified

IL GND high max reduced from 10 to 1 mA

Option Overview table columns for BTS307/308 added

Fig. 1a Vout-spike at Vbb-turn-on added

Semiconductor Group
2003-Oct-01

Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München Infineon Technologies AG 2001 All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide see address list .

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BTS 410 F2

Semiconductor Group
2003-Oct-01
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Datasheet ID: BTS410F2E3043 637897