APTGF150DH120G

APTGF150DH120G Datasheet

APTGF150DH120G

Part	Datasheet
APTGF150DH120G	APTGF150DH120G (pdf)

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APTGF150DH120G Asymmetrical - Bridge NPT IGBT Power Module VCES = 1200V IC = 150A Tc = 80°C Q1 G1 VBUS CR3 OUT1 OUT2 Q4 G4 0/VBUS Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings Unit 1200 Tc = 25°C Tc = 80°C Tc = 25°C ±20 Tc = 25°C Tj = 150°C 300A 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF150DH120G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 25°C Tj = 125°C 350 600 VCE sat Collector Emitter saturation Voltage VGE =15V IC = 150A Tj = 25°C Tj = 125°C VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

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APTGF150DH120G

Asymmetrical - Bridge NPT IGBT Power Module

VCES = 1200V IC = 150A Tc = 80°C

Q1 G1

VBUS CR3

OUT1 OUT2

Q4 G4
0/VBUS

Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance - Symmetrical design - M5 power connectors
• High level of integration

Absolute maximum ratings

Parameter

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

ICM VGE PD

RBSOA

Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant

Max ratings

Unit
1200

Tc = 25°C

Tc = 80°C

Tc = 25°C
±20

Tc = 25°C

Tj = 150°C 300A 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF150DH120G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VGE = 0V VCE = 1200V

Tj = 25°C Tj = 125°C
350 600

VCE sat Collector Emitter saturation Voltage

VGE =15V IC = 150A

Tj = 25°C Tj = 125°C

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

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Datasheet ID: APTGF150DH120G 648740