SPD35N10
SPD35N10 Datasheet
SPD35N10
| Part | Datasheet |
|---|---|
SPD35N10 |
SPD35N10 (pdf) |
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| Preliminary data Power-Transistor Feature N-Channel Enhancement mode operating temperature Avalanche rated dv/dt rated SPD35N10 Product Summary 100 V RDS on 44 m P-TO252 Type SPD35N10 Package P-TO252 Ordering Code Marking Q67042-S4125 35N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current ID puls TC=25°C Avalanche energy, single pulse ID=35 A , VDD=25V, RGS=25 dv/dt IS=35A, VDS=80V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation Ptot TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value 35 140 ±20 150 +175 55/175/56 Unit A mJ kV/µs V W °C 2002-01-30 Preliminary data SPD35N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area F Values Unit min. typ. max. RthJC RthJA 1 K/W - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. |
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