APTC90DDA12T1G

APTC90DDA12T1G Datasheet


APTC90DDA12T1G

Part Datasheet
APTC90DDA12T1G APTC90DDA12T1G APTC90DDA12T1G (pdf)
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APTC90DDA12T1G

Dual boost chopper Super Junction MOSFET

Power Module

VDSS = 900V RDSon = max Tj = 25°C ID = 30A Tc = 25°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged
• Very low stray inductance - Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration

Pins 3/4 must be shorted together

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single boost of twice the current capability
• RoHS Compliant

Absolute maximum ratings

Parameter

VDSS Drain - Source Breakdown Voltage

ID Continuous Drain Current

IDM VGS RDSon

IAR EAR EAS

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance

Maximum Power Dissipation

Avalanche current repetitive and non repetitive Avalanche Energy Single Pulse Avalanche Energy

Max ratings Unit

Tc = 25°C

Tc = 80°C
±20

Tc = 25°C
1940

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTC90DDA12T1G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS

RDS on VGS th IGSS

Zero Gate Voltage Drain Current

Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

VGS = 0V,VDS = 900V Tj = 25°C VGS = 0V,VDS = 900V Tj = 125°C
500 100 µA

VGS = 10V, ID = 26A
100 120

VGS = VDS, ID = 3mA

VGS = ±20 V, VDS = 0V
100 nA

Dynamic Characteristics
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Datasheet ID: APTC90DDA12T1G 648719