APTC90DDA12T1G
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APTC90DDA12T1G (pdf) |
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APTC90DDA12T1G Dual boost chopper Super Junction MOSFET Power Module VDSS = 900V RDSon = max Tj = 25°C ID = 30A Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Pins 3/4 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant Absolute maximum ratings Parameter VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current IDM VGS RDSon IAR EAR EAS Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current repetitive and non repetitive Avalanche Energy Single Pulse Avalanche Energy Max ratings Unit Tc = 25°C Tc = 80°C ±20 Tc = 25°C 1940 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTC90DDA12T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS RDS on VGS th IGSS Zero Gate Voltage Drain Current Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current VGS = 0V,VDS = 900V Tj = 25°C VGS = 0V,VDS = 900V Tj = 125°C 500 100 µA VGS = 10V, ID = 26A 100 120 VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 100 nA Dynamic Characteristics |
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