IRGP4790DPbF IRGP4790D-EPbF
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IRGP4790DPBF (pdf) |
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IRGP4790D-EPBF |
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IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode tSC TJ max = 175°C VCE ON typ. = 1.7V IC = 75A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient Lead-Free, RoHs compliant n-channel G Gate IRGP4790DPbF C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4790DPbF IRGP4790D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4790DPbF IRGP4790D-EPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V IF TC = 25°C Diode Continuous Forward Current IF TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current |
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