NDS9933A

NDS9933A Datasheet

NDS9933A

Part	Datasheet
NDS9933A	NDS9933A (pdf)

Related Parts	Information
NDS9933	NDS9933

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NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed. • A, -20 V. RDS on = VGS = V RDS on = VGS = V RDS on = VGS = V. • High density cell design for extremely low RDS on . • High power and current handling capability in a widely used surface mount package. • Dual MOSFET in surface mount package. D2 D1 SO-8 G1 S2 G1 S1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Outlines and Ordering Information Device Marking Device Reel Size NDS9933A NDS9933A 13’’ 1999 Fairchild Semiconductor Corporation NDS9933A -20 ±8 -10 2 1 -55 to +150 Units °C/W °C/W Tape Width 12mm Quantity 2500 units NDS9933A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA BVDSS IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V mV/°C IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance

PDF Datasheet Preview

NDS9933A

January 1999

NDS9933A

Dual P-Channel Enhancement Mode Field Effect Transistor

This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.
• A, -20 V. RDS on = VGS = V

RDS on = VGS = V RDS on = VGS = V.
• High density cell design for extremely low RDS on .
• High power and current handling capability in a
widely used surface mount package.
• Dual MOSFET in surface mount package.

D2 D1

SO-8

G1 S2 G1 S1

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Outlines and Ordering Information

Device Marking

Device

Reel Size

NDS9933A

NDS9933A
13’’
1999 Fairchild Semiconductor Corporation

NDS9933A
-20 ±8 -10 2 1 -55 to +150

Units
°C/W
°C/W

Tape Width 12mm

Quantity 2500 units

NDS9933A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 µA

BVDSS IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V
mV/°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
100 nA

IGSSR
-100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

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Datasheet ID: NDS9933A 634627