APTC80DA15T1G

APTC80DA15T1G Datasheet

APTC80DA15T1G

Part	Datasheet
APTC80DA15T1G	APTC80DA15T1G (pdf)

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APTC80DA15T1G Boost chopper Super Junction MOSFET Power Module VDSS = 800V RDSon = max Tj = 25°C ID = 28A Tc = 25°C 3 NTC Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 3/4 5/6 must be shorted together Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTC80DA15T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on Drain Source on Resistance VGS = 0V,VDS = 800V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 14A 50 µA 375 150 VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V 3 V ±150 nA Dynamic Characteristics Qg Total gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Td on Tr

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APTC80DA15T1G

Boost chopper Super Junction MOSFET

Power Module

VDSS = 800V RDSon = max Tj = 25°C ID = 28A Tc = 25°C
3 NTC

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
•
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Pins 1/2 3/4 5/6 must be shorted together

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTC80DA15T1G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current RDS on Drain Source on Resistance

VGS = 0V,VDS = 800V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 14A
50 µA
375 150

VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current

VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V
3 V ±150 nA

Dynamic Characteristics

Qg Total gate Charge

Qgs Gate Source Charge

Qgd Gate Drain Charge

Td on Tr

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Datasheet ID: APTC80DA15T1G 648715