APT8M80K

APT8M80K Datasheet

APT8M80K

Part	Datasheet
APT8M80K	APT8M80K (pdf)

PDF Datasheet Preview
APT8M80K 800V, 8A, MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in boost, forward, and other circuits is enhanced by the high avalanche energy capability. APT8M80K Single die MOSFET G • Fast switching with low EMI/RFI • Low RDS on • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant • PFC and other boost converter • Buck converter • Two switch forward asymmetrical bridge • Single switch forward • Flyback • Inverters Absolute Maximum Ratings Symbol Parameter Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case WT Package Weight Torque Mounting Torque TO-220 Package , 4-40 or M3 screw Ratings Unit ±30 Min Typ Max Unit °C/W 10 in•lbf N•m Static Characteristics TJ = 25°C unless otherwise Symbol Parameter Test Conditions VBR DSS RDS on VGS th

PDF Datasheet Preview

APT8M80K
800V, 8A, MAX,

N-Channel MOSFET

Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.

A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in boost, forward, and
other circuits is enhanced by the high avalanche energy capability.

APT8M80K

Single die MOSFET G
• Fast switching with low EMI/RFI
• Low RDS on
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• PFC and other boost converter
• Buck converter
• Two switch forward asymmetrical bridge
• Single switch forward
• Flyback
• Inverters

Absolute Maximum Ratings

Symbol Parameter

Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C

Pulsed Drain Current 1

VGS Gate-Source Voltage

EAS Single Pulse Avalanche Energy 2

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Characteristic

Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

TJ,TSTG Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds 1.6mm from case

WT Package Weight

Torque Mounting Torque TO-220 Package , 4-40 or M3 screw

Ratings

Unit
±30

Min Typ Max Unit
°C/W
10 in•lbf

N•m

Static Characteristics

TJ = 25°C unless otherwise

Symbol Parameter

Test Conditions

VBR DSS

RDS on VGS th

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Datasheet ID: APT8M80K 648708