KSC5042FYDTU

KSC5042FYDTU Datasheet

KSC5042F

Part	Datasheet
KSC5042FYDTU	KSC5042FYDTU (pdf)

Related Parts	Information
KSC5042FTU	KSC5042FTU

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KSC5042F KSC5042F High Voltage Switchihg Dynamic Focus Application • High Collector-Emitter Breakdown Voltage BVCEO=900V • Small Cob =2.8pF Typ. • Wide S.O.A • High reliability TO-220F 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 1500 900 5 100 300 6 150 - 55 ~ 150 Units V mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCB = 900V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 10mA IC = 20mA, IB = 4mA IC = 20mA, IB = 4mA VCB = 100V, f = 1MHz Min. 1500 900 Typ. Max. 10 5 2 Units V µA µA 2002 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE 100 80 60 10mA IB 7mA IB IB = 5mA IB = 4mA IB = 3mA IB = 2mA IB = 1mA IB = 0mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic

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KSC5042F

KSC5042F

High Voltage Switchihg Dynamic Focus Application
• High Collector-Emitter Breakdown Voltage BVCEO=900V
• Small Cob =2.8pF Typ.
• Wide S.O.A
• High reliability

TO-220F
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Value 1500 900
5 100 300
6 150 - 55 ~ 150

Units V mA W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance

IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCB = 900V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 10mA IC = 20mA, IB = 4mA IC = 20mA, IB = 4mA VCB = 100V, f = 1MHz

Min. 1500 900

Typ.

Max.
10 5 2

Units V µA µA
2002 Fairchild Semiconductor Corporation

Typical Characteristics

IC[A], COLLECTOR CURRENT

VBE sat , VCE sat [V], SATURATION VOLTAGE
100 80 60
10mA IB
7mA IB

IB = 5mA

IB = 4mA

IB = 3mA

IB = 2mA

IB = 1mA

IB = 0mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure Static Characteristic

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Datasheet ID: KSC5042FYDTU 634221