APT8075BN
APT8075BN Datasheet
APT8075BN 800V 13.0A
| Part | Datasheet |
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APT8075BN |
APT8075BN (pdf) |
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| TO-247 APT8075BN 800V 13.0A POWER MOS APT8090BN 800V 12.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT 8075BN APT 8090BN UNIT VDSS ID IDM VGS Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage ±30 Volts Amps Volts Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. -55 to 150 °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA APT8075BN APT8090BN ID ON On State Drain Current 2 VDS > ID ON x RDS ON Max, VGS = 10V APT8075BN APT8090BN Drain-Source On-State Resistance 2 RDS ON VGS = 10V, ID [Cont.] APT8075BN APT8090BN IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V VGS TH Gate Threshold Voltage VDS = VGS, ID = 1.0mA THERMAL CHARACTERISTICS TYP MAX UNIT Volts Amps |
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