MT16HTS25664HY-667A1

MT16HTS25664HY-667A1 Datasheet

MT16HTS25664HY 2GB MT16HTS51264HY 4GB

Part	Datasheet
MT16HTS25664HY-667A1	MT16HTS25664HY-667A1 (pdf)

Related Parts	Information
MT16HTS51264HY-667A1	MT16HTS51264HY-667A1
MT16HTS25664HY-53EA1	MT16HTS25664HY-53EA1

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2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664HY 2GB MT16HTS51264HY 4GB • 200-pin, small-outline dual in-line memory module SODIMM • Fast data transfer rates PC2-3200, PC2-4200, or PC2-5300 • 2GB 256 Meg x 64 or 4GB 512 Meg x 64 • VDD = VDDQ 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent opera- tion • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Dual-rank, TwinDie 2COB DRAM devices Figure 1 200-Pin SODIMM MO-224 R/C D Module height 30mm 1.18in Options • Operating temperature1 Commercial 0°C TA +70°C Industrial TA +85°C • Package 200-pin DIMM lead-free • Frequency/CL 2.5ns CL 6 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 3 Marking None I -800 -667 -53E -40E Contact Micron for industrial temperature module offerings CL = CAS READ latency. Not recommended for new designs. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2006 Micron Technology, Inc. All rights reserved.

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2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features

DDR2 SDRAM SODIMM

MT16HTS25664HY 2GB MT16HTS51264HY 4GB
• 200-pin, small-outline dual in-line memory module SODIMM
• Fast data transfer rates PC2-3200, PC2-4200, or PC2-5300
• 2GB 256 Meg x 64 or 4GB 512 Meg x 64
• VDD = VDDQ 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Dual-rank, TwinDie 2COB DRAM devices

Figure 1 200-Pin SODIMM MO-224 R/C D

Module height 30mm 1.18in

Options
• Operating temperature1

Commercial 0°C TA +70°C Industrial TA +85°C
• Package 200-pin DIMM lead-free
• Frequency/CL 2.5ns CL 6 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 3

Marking

None I
-800 -667 -53E -40E

Contact Micron for industrial temperature module offerings

CL = CAS READ latency.

Not recommended for new designs.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

PC2-3200

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2006 Micron Technology, Inc. All rights reserved.

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Datasheet ID: MT16HTS25664HY-667A1 648308