APT44GA60BD30C

APT44GA60BD30C Datasheet

APT44GA60BD30C APT44GA60SD30C

Part	Datasheet
APT44GA60BD30C	APT44GA60BD30C (pdf)

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APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. The "C" represents a standard custom part. This device has a lower VCE on than the standard Mos 8 IGBT and Diode combi. TO-247 APT44GA60SD30C D3PAK APT44GA60BD30C • Fast switching with low EMI • Very Low Eoff for maximum • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high industrial Absolute Maximum Ratings Symbol Parameter Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Collector Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Total Power Dissipation TC = 25°C Switching Safe Operating Area TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering from Case for 10 Seconds Ratings 600 78 44 130 ±30 337 130A 600V -55 to 150 300 Unit V A V W Static Characteristics TJ = 25°C unless otherwise Symbol Parameter Test Conditions Max Unit VBR CES VCE on VGE th ICES IGES Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current VGE = 0V, IC = 1.0mA VGE = 15V, TJ = 25°C IC = 26A TJ = 125°C VGE =VCE , IC = 1mA VCE = 600V, TJ = 25°C VGE = 0V TJ = 125°C VGS = ±30V 275 uA 3000 ±100 Microsemi Website -

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APT44GA60BD30C APT44GA60SD30C
600V

High Speed PT IGBT

POWER MOS is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. The "C" represents a standard custom part. This device has a lower VCE on than the standard Mos 8 IGBT and Diode combi.

TO-247

APT44GA60SD30C

D3PAK

APT44GA60BD30C
• Fast switching with low EMI
• Very Low Eoff for maximum
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high industrial

Absolute Maximum Ratings

Symbol Parameter

Vces IC1 IC2 ICM VGE PD SSOA

TJ, TSTG TL

Collector Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Total Power Dissipation TC = 25°C Switching Safe Operating Area TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering from Case for 10 Seconds

Ratings 600 78 44 130 ±30 337
130A 600V -55 to 150 300

Unit V A V W

Static Characteristics

TJ = 25°C unless otherwise

Symbol Parameter

Test Conditions

Max Unit

VBR CES VCE on VGE th

ICES IGES

Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current

VGE = 0V, IC = 1.0mA

VGE = 15V,

TJ = 25°C

IC = 26A

TJ = 125°C

VGE =VCE , IC = 1mA

VCE = 600V,

TJ = 25°C

VGE = 0V

TJ = 125°C

VGS = ±30V
275 uA
3000
±100

Microsemi Website -

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Datasheet ID: APT44GA60BD30C 648668