MAGX-002731-100L00

MAGX-002731-100L00 Datasheet

MAGX-002731-100L00

Part	Datasheet
MAGX-002731-100L00	MAGX-002731-100L00 (pdf)

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MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor - GHz, 100W Peak, 500us Pulse, 10% Duty Cycle • GaN depletion mode HEMT microwave transistor • Common source configuration • Broadband Class AB operation • Thermally enhanced Cu/Mo/Cu package • RoHS Compliant • +50V Typical Operation • MTTF of 114 years Channel Temperature < 200°C Application • Civilian and Military Pulsed Radar Production V1 23 Aug 11 Product Description The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a Typical RF Performance wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides Freq. Pin Pout Gain Id-Pk Eff MHz W Peak dB excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load 2700 conditions unparalleled with older semiconductor technologies. 2900 3100 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows Vdd=50V, Idq=500mA pulsed , GHz, Pulse=500us, Duty=10%. Ordering Information MAGX-002731-100L00 MAGX-002731-SB2PPR 100W GaN Power Transistor Evaluation Fixture ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: Visit for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product s or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor - GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Absolute Maximum Ratings Table 1, 2, 3 Supply Voltage Vdd +65V Supply Voltage Vgg -8 to 0V Supply Current Id1 7100 mA Pk Input Power Pin +34 dBm Absolute Max. Junction/Channel Temp 200 ºC Pulsed Power Dissipation Pavg at 85 ºC Thermal Resistance, Tchannel = 200 ºC VDD = 50V, IDQ = 500mA, Pout = 100W Peak 300us Pulse / 10% Duty Operating Temp 128W ºC/W -40 to +95C Storage Temp -65 to +150C Mounting Temperature See solder reflow profile ESD Min. - Machine Model MM ESD Min. - Human Body Model HBM >250 V MSL Level MSL1 1 Operation of this device above any one of these parameters may cause permanent damage. 2 Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 3 For saturated performance it recommended that the sum of 3*Vdd + abs Vgg <175 Parameter Test Conditions

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MAGX-002731-100L00

GaN HEMT Pulsed Power Transistor - GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
• GaN depletion mode HEMT microwave transistor
• Common source configuration
• Broadband Class AB operation
• Thermally enhanced Cu/Mo/Cu package
• RoHS Compliant
• +50V Typical Operation
• MTTF of 114 years Channel Temperature < 200°C

Application
• Civilian and Military Pulsed Radar

Production V1 23 Aug 11

Product Description

The MAGX-002731-100L00 is a gold metalized matched

Gallium Nitride GaN on Silicon Carbide RF power transistor
optimized for civilian and military radar pulsed applications
between 2700 - 3100 MHz. Using state of the art wafer
fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a

Typical RF Performance
wide bandwidth for today’s demanding application needs. The

MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides

Freq. Pin Pout Gain Id-Pk Eff

MHz W Peak dB
excellent thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme mismatched load
2700
conditions unparalleled with older semiconductor technologies.
2900
3100

Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows Vdd=50V, Idq=500mA pulsed , GHz, Pulse=500us, Duty=10%.
Ordering Information

MAGX-002731-100L00 MAGX-002731-SB2PPR
100W GaN Power Transistor Evaluation Fixture

ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

Visit for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product s or information contained herein without notice.

MAGX-002731-100L00

GaN HEMT Pulsed Power Transistor - GHz, 100W Peak, 500us Pulse, 10% Duty Cycle

Production V1 23 Aug 11

Absolute Maximum Ratings Table 1, 2, 3

Supply Voltage Vdd
+65V

Supply Voltage Vgg
-8 to 0V

Supply Current Id1
7100 mA Pk

Input Power Pin
+34 dBm

Absolute Max. Junction/Channel Temp
200 ºC

Pulsed Power Dissipation Pavg at 85 ºC

Thermal Resistance, Tchannel = 200 ºC

VDD = 50V, IDQ = 500mA, Pout = 100W Peak 300us Pulse / 10% Duty

Operating Temp
128W ºC/W -40 to +95C

Storage Temp
-65 to +150C

Mounting Temperature

See solder reflow profile

ESD Min. - Machine Model MM

ESD Min. - Human Body Model HBM
>250 V

MSL Level

MSL1
1 Operation of this device above any one of these parameters may cause permanent damage.
2 Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
3 For saturated performance it recommended that the sum of 3*Vdd + abs Vgg <175

Parameter

Test Conditions

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-002731-100L00 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-002731-100L00 646887