APT17N80SC3G

APT17N80SC3G Datasheet

APT17N80BC3 APT17N80SC3

Part	Datasheet
APT17N80SC3G	APT17N80SC3G (pdf)

Related Parts	Information
APT17N80BC3G	APT17N80BC3G

PDF Datasheet Preview
APT17N80BC3 APT17N80SC3 800V 17A Super Junction MOSFET D3PAK COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package TO-247 MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT17N80BC3_SC3 UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Volts 17 Amps ±20 Volts ±30 Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Drain-Source Voltage slope VDS = 640V, ID = 17A, TJ = 125°C Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 -55 to 150 300 50 17 670 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA RDS on Drain-Source On-State Resistance 2 VGS = 10V, 11A IDSS Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V, TC = 150°C IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V ±100 VGS th Gate Threshold Voltage VDS = VGS, ID = 1mA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. UNIT Volts Ohms nA Volts

PDF Datasheet Preview

APT17N80BC3 APT17N80SC3
800V 17A

Super Junction MOSFET

D3PAK

COOLMOS

Power Semiconductors
• Ultra low RDS ON
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package

TO-247

MAXIMUM RATINGS

All Ratings TC = 25°C unless otherwise specified.

Symbol Parameter

APT17N80BC3_SC3 UNIT

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient

Volts
17 Amps
±20

Volts
±30

Total Power Dissipation TC = 25°C

Linear Derating Factor

Watts W/°C

TJ,TSTG TL dv/dt IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Drain-Source Voltage slope VDS = 640V, ID = 17A, TJ = 125°C Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4
-55 to 150 300 50 17 670
°C V/ns Amps mJ

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA

RDS on Drain-Source On-State Resistance 2 VGS = 10V, 11A

IDSS

Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V

Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V, TC = 150°C

IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V
±100

VGS th Gate Threshold Voltage VDS = VGS, ID = 1mA

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

UNIT Volts Ohms
nA Volts

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APT17N80SC3G Datasheet file may be downloaded here without warranties.

Datasheet ID: APT17N80SC3G 648636