APT130SM70J

APT130SM70J Datasheet

APT130SM70J

Part	Datasheet
APT130SM70J	APT130SM70J (pdf)

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APT130SM70J 700V, 78A, 35mΩ Silicon Carbide N-Channel Power MOSFET Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. SOT-227 S Package APT130SM70J "UL Recognized" file # E145592 SiC MOSFET Features: • Low on-resistance virtually independent on the ambient temperature • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance ESR • Stable operation at high junction temperature, Tj max = +175C • Fast and reliable body diode • Superior avalanche ruggedness FEATURES / TYPICAL APPLICATIONS SiC MOSFET Benefits: • High efficiency to enable lighter/compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need of external Free Wheeling Diode • Lower system cost of ownership Applications • PV inverter, converter and industrial motor drives • Smart grid transmission & distribution • Induction heating, and welding • H/EV powertrain and EV charger • Power supply and distribution MAXIMUM RATINGS Symbol VDSS ID IDM VGS Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor Ratings 700 78 55 270 -10 to +25 273 Unit V V W/°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Tj Tstg WT Torque Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Package Weight Mounting Torque SOT-227 Package , 6-32 or M3 screw Max 175 150 10 Unit °C/W oz in•lbf N•m APT130SM70J STATIC CHARACTERISTICS

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APT130SM70J
700V, 78A, 35mΩ

Silicon Carbide N-Channel Power MOSFET

Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

SOT-227 S

Package APT130SM70J
"UL Recognized" file # E145592

SiC MOSFET Features:
• Low on-resistance virtually independent on the ambient temperature
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance ESR
• Stable operation at high junction temperature, Tj max = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness

FEATURES / TYPICAL APPLICATIONS

SiC MOSFET Benefits:
• High efficiency to enable lighter/compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external Free Wheeling Diode
• Lower system cost of ownership

Applications
• PV inverter, converter and industrial motor
drives
• Smart grid transmission & distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution

MAXIMUM RATINGS

Symbol VDSS

ID IDM VGS

Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor

Ratings 700 78 55 270
-10 to +25 273

Unit V

V W/°C

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Tj Tstg WT

Torque

Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Package Weight

Mounting Torque SOT-227 Package , 6-32 or M3 screw

Max 175 150 10

Unit °C/W
oz in•lbf N•m

APT130SM70J

STATIC CHARACTERISTICS

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Datasheet ID: APT130SM70J 648620