APT1001RBN
APT1001RBN Datasheet
APT1001RBN 1000V 11.0A
| Part | Datasheet |
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APT1001RBN |
APT1001RBN (pdf) |
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| TO-247 APT1001RBN 1000V 11.0A POWER MOS APT5030BN 500V 21.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT 1001RBN UNIT VDSS Drain-Source Voltage 1000 Volts Continuous Drain Current TC = 25°C Pulsed Drain Current 1 VGS Gate-Source Voltage 11 44 ±30 Amps Volts Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA APT1001RBN ID ON On State Drain Current 2 VDS > ID ON x RDS ON Max, VGS = 10V Drain-Source On-State Resistance 2 RDS ON VGS = 10V, ID [Cont.] APT1001RBN IDSS IGSS VGS TH Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 1.0mA THERMAL CHARACTERISTICS MIN 1000 MAX UNIT Volts Amps |
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