BFG 19S E6327

BFG 19S E6327 Datasheet

BFG19S

Part	Datasheet
BFG 19S E6327	BFG 19S E6327 (pdf)

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NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to GHz at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFG19S ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFG19S Marking Pin Configuration BFG19S 1 = E 2 = B 3 = E 4 = C - Package SOT223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 75°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point3 RthJS 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance Value 15 20 3 210 21 1 150 -65 150 -65 150 Value 75 Unit V mA W °C Unit K/W 2008-07-10 1 BFG19S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gainIC = 70 mA, VCE = 8 V, pulse measured V BR CEO 15

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NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and telecommunication
systems up to GHz at collector currents
from 10 mA to 70 mA
• Pb-free RoHS compliant package1
• Qualified according AEC Q101
* Short term description

BFG19S

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BFG19S

Marking

Pin Configuration

BFG19S 1 = E 2 = B 3 = E 4 = C -

Package SOT223

Maximum Ratings

Parameter

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 75°C Junction temperature Ambient temperature Storage temperature

VCEO VCES VCBO VEBO IC IB Ptot

Tj TA Tstg

Thermal Resistance

Parameter

Junction - soldering point3

RthJS
1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance

Value 15 20 3 210 21 1
150 -65 150 -65 150

Value 75

Unit V
mA W °C

Unit K/W
2008-07-10 1

BFG19S

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gainIC = 70 mA, VCE = 8 V, pulse measured

V BR CEO 15

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Datasheet ID: BFG19SE6327 637667