2124-12L

2124-12L Datasheet

2124-12L

Part	Datasheet
2124-12L	2124-12L (pdf)

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R.A.041400 2124-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes double input and output prematching for full broadband capability. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 25°C 44 Watts CASE OUTLINE 55AW Style 1 COMMON BASE Maximum Voltage and Current Collector to Emitter Voltage BVCES Emitter to Base Voltage BVEBO VCollector Current Ic Maximum Temperatures Storage Temperature Operating Junction Temperature 45 V 3 Amps -65 to +200 °C +200 °C ELECTRICAL CHARACTERISTICS 25°C SYMBOL CHARACTERISTICS Pout Pin Pg ηc VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 2100-2400 MHz VCC = 22 Volts Pout = 12 Watts Pk FUNCTIONAL CHARACTERISTICS 25°C BVCES BVEBO hFE COB Collector to Base Breakdown Emitter to Base Breakdown DC Current Gain Output Capacitance* Thermal Resistance *Not measureable due to internal prematch network Ic = 50 mA Ie = 10 mA Vce = 5V, Ic = 1A Vcb = 28v, F = 1MHz Tc = 25oC MIN TYP MAX UNITS °C/W GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT OR CONTACT OUR FACTORY DIRECT. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 2124-12L August 1996

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R.A.041400
2124-12L
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz

The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes double input and output prematching for full broadband capability. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation 25°C
44 Watts

CASE OUTLINE 55AW Style 1

COMMON BASE

Maximum Voltage and Current Collector to Emitter Voltage BVCES Emitter to Base Voltage BVEBO VCollector Current Ic

Maximum Temperatures Storage Temperature Operating Junction Temperature
45 V 3 Amps
-65 to +200 °C +200 °C

ELECTRICAL CHARACTERISTICS 25°C

SYMBOL CHARACTERISTICS

Pout Pin Pg ηc VSWR

Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance

TEST CONDITIONS F = 2100-2400 MHz VCC = 22 Volts

Pout = 12 Watts Pk

FUNCTIONAL CHARACTERISTICS 25°C

BVCES BVEBO hFE COB

Collector to Base Breakdown Emitter to Base Breakdown DC Current Gain Output Capacitance* Thermal Resistance
*Not measureable due to internal prematch network

Ic = 50 mA Ie = 10 mA Vce = 5V, Ic = 1A Vcb = 28v, F = 1MHz Tc = 25oC

MIN TYP MAX UNITS
°C/W

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION

PLEASE CHECK OUR WEB SITE AT OR CONTACT OUR FACTORY DIRECT.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2124-12L

August 1996

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2124-12L Datasheet file may be downloaded here without warranties.

Datasheet ID: 2124-12L 648584