IRF7822TRR

IRF7822TRR Datasheet

IRF7822

Part	Datasheet
IRF7822TRR	IRF7822TRR (pdf)

Related Parts	Information
IRF7822TRL	IRF7822TRL

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PD - 94279 IRF7822 Power MOSFET for DC-DC Converters • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. SO-8 Top View The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS on , gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS on and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. DEVICE CHARACTERISTICSU RDS on Q Qsw Qoss IRF7822 44nC 12nC 27nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current VGS 4.5V Pulsed Drain CurrentQ T = 25°C A TA = 70°C Power Dissipation T = 25°C A TA = 70°C Junction & Storage Temperature Range Continuous Source Current Body Diode Pulsed Source CurrentQ Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead Symbol VDS VGS I IDM P TJ, TSTG I IRF7822 30 ±12 18 13 150 to 150 Max. 40 20 Units V °C A Units °C/W °C/W 07/11/01 IRF7822 Electrical Characteristics Parameter

PDF Datasheet Preview

PD - 94279

IRF7822

Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

SO-8

Top View

The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS on , gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS on and high Cdv/ dt immunity for synchronous FET applications.

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.

DEVICE CHARACTERISTICSU

RDS on Q

Qsw Qoss

IRF7822 44nC 12nC 27nC

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current VGS 4.5V Pulsed Drain CurrentQ

T = 25°C A

TA = 70°C

Power Dissipation

T = 25°C A

TA = 70°C

Junction & Storage Temperature Range

Continuous Source Current Body Diode

Pulsed Source CurrentQ

Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead

Symbol VDS VGS I

IDM P

TJ, TSTG I

IRF7822 30 ±12 18 13 150
to 150

Max. 40 20

Units V
°C A

Units °C/W °C/W
07/11/01

IRF7822

Electrical Characteristics

Parameter

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Datasheet ID: IRF7822TRR 639041