PTMA210452FL V1 R250
PTMA210452FL V1 R250 Datasheet
PTMA210452EL PTMA210452FL
| Part | Datasheet |
|---|---|
PTMA210452FL V1 R250 |
PTMA210452FL V1 R250 (pdf) |
| Related Parts | Information |
|---|---|
PTMA210452ELV1XWSA1 |
PTMA210452ELV1XWSA1 |
PTMA210452FLV1XWSA1 |
PTMA210452FLV1XWSA1 |
PTMA210452EL V1 R250 |
PTMA210452EL V1 R250 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power 45 W, 1900 2200 MHz PTMA210452EL PTMA210452FL The PTMA210452FL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated intended for use in all typical modulation formats from 1900 to 2200 MHz. These devices are offered in thermally-enhanced ceramic packages s with solder-friendly plating for cool and reliable operation. PTMA210452FL Package H-34265-8 PTMA210452EL Package H-33265-8 ct Features u • Designed for wide RF and modulation bandwidths and d low memory effects • Typical two-carrier WCDMA performance at 2140 MHz, o 28 V r - Average output power = W - Linear Gain = 28 dB - IMD3 = dBc d• Typical two-tone performance, 2140 MHz, 28 V e - Output power PEP = 45 W at IM3 = dBc - = 32% u • Capable of handling 10:1 VSWR 28 V, 45 W CW output power in • Integrated ESD protection. Meets HBM Class 1B minit mum , per JESD22-A114F • Thermally-enhanced packages, Pb-free and RoHS com- n pliant, with solder-friendly plating co RF Characteristics is Two-carrier WCDMA Measurements tested in test d VDD = 28 V, IDQ1 = 200 mA tuned for linearity , IDQ2 = 450 mA tuned for linearity & POUT = W average, = 2135 MHz, = 2145 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF Characteristic Input Return Loss Gain Drain Efficiency Intermodulation Distortion, 2-channel WCDMA Max Unit Gps ηD IMD All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution RF Characteristics Small-signal CW Measurements not subject to production by design/characterization in test VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 450 mA, POUT = 1 W, = 2140 MHz Characteristic Conditions Gain Flatness 1 W / 30 MHz Phase Linearity Group Delay DC Characteristics Stage 1 Characteristics Drain Leakage Current Gate Leakage Current = 2140 MHz Ordering Information Type and Version PTMA210452EL V1 Package Outline H-33265-8 s TSTG t c 25 to +150 odu Package Description pr Thermally-enhanced slotted PTMA210452EL V1 R250 PTMA210452FL V1 d PTMA210452FL V1 R250 H-33265-8 H-34265-8 H-34265-8 Thermally-enhanced slotted Thermally-enhanced earless Thermally-enhanced earless discontinue Typical Performance data taken in a production test fixture °C dBm °C °C/W °C/W Shipping Tray Tape & Reel Tray Tape & Reel *See distributor for future availability. Data Sheet 3 of 11 Confidential, Limited Internal Distribution Typical Performance cont. PTMA210452EL PTMA210452FL discontinued products Data Sheet 4 of 11 Confidential, Limited Internal Distribution Typical Performance cont. PTMA210452EL PTMA210452FL products discontinued Broadband Circuit Impedance Frequency MHz 1900 2110 2140 2170 2200 Z Source Ω Z Load Ω Z0 = 50 Z Load 2200 MHz Z Source 2200 MHz 1900 MHz 1900 MHz ARD GENERATOR ---> Data Sheet 5 of 11 Confidential, Limited Internal Distribution Reference Circuit for evaluation only |
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