MT42L64M64D2LL-18 WT:C TR

MT42L64M64D2LL-18 WT:C TR Datasheet


MT42L128M16, MT42L64M32, MT42L64M64

Part Datasheet
MT42L64M64D2LL-18 WT:C TR MT42L64M64D2LL-18 WT:C TR MT42L64M64D2LL-18 WT:C TR (pdf)
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2Gb x16, x32, x64 Automotive LPDDR2 SDRAM Features

Automotive LPDDR2 SDRAM

MT42L128M16, MT42L64M32, MT42L64M64
• Ultra low-voltage core and I/O power supplies VDD2 = VDDCA/VDDQ = VDD1 =
• Clock frequency range MHz data rate range Mb/s/pin
• Four-bit prefetch DDR architecture
• Eight internal banks for concurrent operation
• Multiplexed, double data rate, command/address
inputs commands entered on every CK edge
• Bidirectional/differential data strobe per byte of
data DQS/DQS#
• Programmable READ and WRITE latencies RL/WL
• Programmable burst lengths 4, 8, or 16
• Per-bank refresh for concurrent operation
• On-chip temperature sensor to control self refresh
rate
• Partial-array self refresh PASR
• Deep power-down mode DPD
• Selectable output drive strength DS
• Clock stop capability
• RoHS-compliant, “green” packaging

Table 1 Key Timing Parameters

Speed Clock Rate Data Rate Grade MHz Mb/s/pin RL WL tRCD/tRP1
1066
8 4 Typical
6 3 Typical
5 2 Typical

Options
• VDD2 1.2V
• Configuration
16 Meg x 16 x 8 banks 8 Meg x 32 x 8 banks 8 Meg x 32 x 8 banks x 2 die
• Device type LPDDR2 single die/dual die
• FBGA “green” package 134-ball FBGA 10mm x
11.5mm 168-ball FBGA 12mm x 12mm 216-ball FBGA 12mm x 12mm
• Timing cycle time 1.875ns RL = 8 2.5ns RL = 6 3.0ns RL = 5
• Special options Standard Automotive grade Package-level
burn-in
• Operating temperature range

Marking
128M16 64M32 64M64

D1, D2

LF LL
-18 -25 -3

WT IT AT :C

Note For Fast tRCD/tRP, contact factory.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
2Gb x16, x32, x64 Automotive LPDDR2 SDRAM Features

Table 2 Single Channel, Single Rank S4 Configuration Addressing

Architecture Die configuration

Row addressing Column addressing

Number of die per rank

Ranks per channel1

Chip Select CS0# CS1# CS0# CS1# CS0# CS1#
128 Meg x 16 Meg x 16 x 8 banks
n/a 16K A[13:0]
1K A[9:0] n/a 1 0 1
64 Meg x 32 8 Meg x 32 x 8 banks
n/a 16K A[13:0] 512 A[8:0]
More datasheets: SPD25N06S2-40 | ID1A-6S-2.54SF(71) | ID1A-6S-2.54SF | ID1A-6S-2.54SF(21) | ID1A-6S-2.54SF(81) | 2002182175 | 2002182100 | IRL3502 | IRL3502L | 71802363


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Datasheet ID: MT42L64M64D2LL-18WT:CTR 648395