IRL3502L

IRL3502L Datasheet

IRL3502

Part	Datasheet
IRL3502L	IRL3502L (pdf)

Related Parts	Information
IRL3502	IRL3502

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l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 5.0V Continuous Drain Current, VGS 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Start Up Transient, tp = 100µs Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD 9.1698A IRL3502 Power MOSFET VDSS = 20V RDS on = TO-220AB Max. 67 420 140 ± 10 14 390 64 14 -55 to + 150 300 1.6mm from case 10 lbf•in 1.1N•m Typ. Max. 62 Units W/°C mJ A mJ V/ns Units °C/W 11/17/97 IRL3502 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on VGS th gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS IGSS Qg Qgs Qgd td on tr td off tf Drain-to-Source Leakage Current Internal Drain Inductance Internal Source Inductance

PDF Datasheet Preview

l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching

These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS VGSM

EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 5.0V Continuous Drain Current, VGS 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Start Up Transient, tp = 100µs Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD 9.1698A

IRL3502

Power MOSFET

VDSS = 20V

RDS on =

TO-220AB

Max.
67 420 140 ± 10 14
390 64 14 -55 to + 150
300 1.6mm from case 10 lbf•in 1.1N•m

Typ.

Max. 62

Units

W/°C
mJ A mJ V/ns

Units
°C/W
11/17/97

IRL3502

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

RDS on

VGS th gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage Forward Transconductance

IDSS

IGSS

Qg Qgs Qgd td on tr td off tf

Drain-to-Source Leakage Current

Internal Drain Inductance

Internal Source Inductance

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Datasheet ID: IRL3502L 639094