FMM 150-0075P
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FMM150-0075P (pdf) |
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FMM 150-0075P Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM ID25 = 150 A VDSS = 75 V R = DS on typ mΩ MOSFET T1/T2 VDSS ID25 ID90 IF25 IF90 Conditions TVJ = 25°C to TVJmax TC = 25°C TC = 90°C body diode TC = 25°C body diode TC = 90°C Maximum Ratings ±20 RDSon VGSth I DSS IGSS Qg Qgs Qgd td on tr td off tf Eon Eoff Erec off VF R thJC RthJH Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. VGS = 10 V ID = ID90 on chip level VDS = 20 V ID = 1 mA 25°C TVJ = 125°C VGS = ±20 V VDS = 0 V VGS= 10 V VDS = 60 V ID = 50 A 10 µA 200 nA Inductive load, TVJ = 125°C VGS= 10 V VDS = 30 V ID = 120 A RG = 10 Ω body diode IF = 75 A VGS = 0 V body diode 20A; -di/dt 100A/µs; with heat transfer paste • trench MOSFET - very low on state resistance RDSon - fast switching • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered E 72873 |
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