IPB230N06L3GATMA1
IPB230N06L3GATMA1 Datasheet
IPB230N06L3 G IPP230N06L3 G
| Part | Datasheet |
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IPB230N06L3GATMA1 |
IPB230N06L3GATMA1 (pdf) |
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IPP230N06L3 G |
IPP230N06L3 G |
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| Type OptiMOS 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product FOM • N-channel, logic level • 100% avalanche tested • Pb-free plating RoHS compliant • Qualified according to JEDEC1 for target applications • Halogen-free according to IEC61249-2-21 IPB230N06L3 G IPP230N06L3 G Product Summary VDS RDS on ,max ID 60 V 23 mW 30 A Type IPB230N06L3 G IPP230N06L3 G Package Marking PG-TO263-3 230N06L PG-TO220-3 230N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C Avalanche energy, single pulse3 I D=20 A, R GS=25 W Gate source voltage Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg 1 J-STD20 and JESD22 2 See figure 3 for more detailed information 3 See figure 13 for more detailed information Value Unit ±20 -55 175 2012-12-19 IPB230N06L3 G IPP230N06L3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cooling area4 min. Values typ. |
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