MT36HTS51272FY-667A3E3

MT36HTS51272FY-667A3E3 Datasheet


MT36HTS51272F 4GB

Part Datasheet
MT36HTS51272FY-667A3E3 MT36HTS51272FY-667A3E3 MT36HTS51272FY-667A3E3 (pdf)
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240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features

DDR2 SDRAM FBDIMM

MT36HTS51272F 4GB

For the latest data sheet, refer to Micron’s Web site:
• 240-pin DDR2 fully buffered, dual in-line memory module FBDIMM with ECC to detect and report channel errors to the host memory controller
• Fast data transfer rates PC2-4200 and PC2-5300 using 533 MT/s and 667 MT/s DDR2 SDRAM components
• Gb/s and Gb/s link transfer rates
• High-speed, differential, point-to-point link
between host memory controller and the AMB using serial, dual-simplex bit lanes 10-pair southbound data path to FBDIMM 14-pair northbound data path from FBDIMM
• Fault tolerant can work around a bad bit lane in each direction
• High-density scaling with up to 8 dual-rank modules 288 DDR2 SDRAM devices per channel
• SMBus interface to AMB for configuration register access
• In-band and out-of-band command access
• Deterministic protocol Enables memory controller to optimize DRAM
accesses for maximum performance Delivers precise control and repeatable memory
behavior
• Automatic DDR2 SDRAM bus and channel
calibration
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DDR2 SDRAM test support
• VDD = VDDQ = +1.8V for DDR2 SDRAM
• VREF = 0 .9V SDRAM C/A termination
• VCC = 1.5V for advanced memory buffer AMB
• VDDSPD = +1.7V to +3.6V for SPD EEPROM
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Dual rank
• Supports 95°C operation with 2X refresh tREFI =
7.8µs at or below 85°C tREFI = 3.9µs above 85°C

Figure 1 240-Pin FBDIMM MO-256 R/C J

PCB height 30.35mm 1.19in

Options
• Package 240-pin FBDIMM lead-free
• Frequency/CL1 3.75ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533
• PCB height 30.35mm 1.19in

Notes CL = CAS READ latency.

Marking

Y -667 -53E

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2006 Micron Technology, Inc. All rights reserved.
and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features

Table 1 FBDIMM/DDR2 SDRAM Addressing

Parameter Refresh count Device bank addressing Device page size per bank Device configuration Row addressing Column addressing Module rank addressing

Table 2 Performance Parameters

Speed Grade -667 -53E

Module Bandwidth PC2-5300 PC2-4200

Peak Channel Throughput

GB/s GB/s
8K 8 BA0, BA1, BA2
1KB TwinDie 1Gb 256 Meg x 4
16K 2K A11
2 S0#, S1#

Link Transfer Rate GT/s GT/s

Latency CL-tRCD-tRP
5-5-5 4-4-4

Table 3 Part Numbers and Label Markings

Part Number1 MT36HTS51272FY-53E__ MT36HTS51272FY-667__

Module Density
More datasheets: 150-35930 | LTST-E670MBL30 | MKJ1A6W9-19PA | SEP8705-003 | SEP8705-001 | SEP8705-002 | MT36HTS51272FY-667A3D3 | MT36HTS51272FY-53EA3E3 | MT36HTS51272FY-53EA3D3 | MT36HTS51272FY-53EA2E3


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Datasheet ID: MT36HTS51272FY-667A3E3 648372