MT36HTS51272FY-53EA2D3
MT36HTS51272FY-53EA2D3 Datasheet
MT36HTS51272F 4GB
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MT36HTS51272FY-53EA2D3 |
MT36HTS51272FY-53EA2D3 (pdf) |
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MT36HTS51272FY-667A3D3 |
MT36HTS51272FY-667A3D3 |
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MT36HTS51272FY-53EA3E3 |
MT36HTS51272FY-53EA3E3 |
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MT36HTS51272FY-53EA3D3 |
MT36HTS51272FY-53EA3D3 |
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MT36HTS51272FY-53EA2E3 |
MT36HTS51272FY-53EA2E3 |
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MT36HTS51272FY-667A3E3 |
MT36HTS51272FY-667A3E3 |
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MT36HTS51272FY-667A2E3 |
MT36HTS51272FY-667A2E3 |
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MT36HTS51272FY-667A2D3 |
MT36HTS51272FY-667A2D3 |
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| 240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT36HTS51272F 4GB For the latest data sheet, refer to Micron’s Web site: • 240-pin DDR2 fully buffered, dual in-line memory module FBDIMM with ECC to detect and report channel errors to the host memory controller • Fast data transfer rates PC2-4200 and PC2-5300 using 533 MT/s and 667 MT/s DDR2 SDRAM components • Gb/s and Gb/s link transfer rates • High-speed, differential, point-to-point link between host memory controller and the AMB using serial, dual-simplex bit lanes 10-pair southbound data path to FBDIMM 14-pair northbound data path from FBDIMM • Fault tolerant can work around a bad bit lane in each direction • High-density scaling with up to 8 dual-rank modules 288 DDR2 SDRAM devices per channel • SMBus interface to AMB for configuration register access • In-band and out-of-band command access • Deterministic protocol Enables memory controller to optimize DRAM accesses for maximum performance Delivers precise control and repeatable memory behavior • Automatic DDR2 SDRAM bus and channel calibration • Transmitter de-emphasis to reduce ISI • MBIST and IBIST test functions • Transparent mode for DDR2 SDRAM test support • VDD = VDDQ = +1.8V for DDR2 SDRAM • VREF = 0 .9V SDRAM C/A termination • VCC = 1.5V for advanced memory buffer AMB • VDDSPD = +1.7V to +3.6V for SPD EEPROM • Serial presence-detect SPD with EEPROM • Gold edge contacts • Dual rank • Supports 95°C operation with 2X refresh tREFI = 7.8µs at or below 85°C tREFI = 3.9µs above 85°C Figure 1 240-Pin FBDIMM MO-256 R/C J PCB height 30.35mm 1.19in Options • Package 240-pin FBDIMM lead-free • Frequency/CL1 3.75ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 • PCB height 30.35mm 1.19in Notes CL = CAS READ latency. Marking Y -667 -53E Micron Technology, Inc., reserves the right to change products or specifications without notice. 2006 Micron Technology, Inc. All rights reserved. and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. 240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features Table 1 FBDIMM/DDR2 SDRAM Addressing Parameter Refresh count Device bank addressing Device page size per bank Device configuration Row addressing Column addressing Module rank addressing Table 2 Performance Parameters Speed Grade -667 -53E Module Bandwidth PC2-5300 PC2-4200 Peak Channel Throughput GB/s GB/s 8K 8 BA0, BA1, BA2 1KB TwinDie 1Gb 256 Meg x 4 16K 2K A11 2 S0#, S1# Link Transfer Rate GT/s GT/s Latency CL-tRCD-tRP 5-5-5 4-4-4 Table 3 Part Numbers and Label Markings Part Number1 MT36HTS51272FY-53E__ MT36HTS51272FY-667__ Module Density |
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