SEP8705-002
SEP8705-002 Datasheet
SEP8705
| Part | Datasheet |
|---|---|
SEP8705-002 |
SEP8705-002 (pdf) |
| Related Parts | Information |
|---|---|
SEP8705-003 |
SEP8705-003 |
SEP8705-001 |
SEP8705-001 |
| PDF Datasheet Preview |
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| SEP8705 AlGaAs Infrared Emitting Diode FEATURES • T-1 package • nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification. INFRA-55.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIA. CATHODE ANODE MAX. MIN. SQ. LEAD TYP DIA. DIM_101.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8705 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Continuous Forward Current 50 mA Power Dissipation 70 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 5 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8705 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement |
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