MT18HVF12872 P 1GB
Part | Datasheet |
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MT18HVF12872PY-667D1 (pdf) |
Related Parts | Information |
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MT18HVF6472Y-53EB1 |
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MT18HVF12872Y-53EB1 |
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MT18HVF12872Y-40ED1 |
PDF Datasheet Preview |
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1GB x72, ECC, SR 240-Pin DDR2 VLP RDIMM Features DDR2 VLP Registered DIMM RDIMM MT18HVF12872 P 1GB For the latest data sheet and for component data sheets, refer to Micron's Web site: • Supports 95°C with double refresh • Fits with the ATCA form factor • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, or PC2-5300 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4-bit prefetch architecture • DLL to align DQ and DQS transitions with CK • Single rank • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts Table 1 Addressing Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Figure 1 240-Pin VLP DIMM MO-237 Functionally equivelent to R/C “U” and “V” Height 17.9mm 0.705in Options Marking • Parity • Package 240-pin DIMM lead-free • Frequency/CAS latency1 3.0ns CL = 5 DDR2-667 2 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 17.9mm 1.18in -667 -53E -40E Notes CL = CAS READ latency registered mode will add one clock cycle to CL. Contact Micron for product availability. 8K 16K 4 BA0, BA1 1KB 512Mb 128 Meg x 4 2K A11 1 S0# Table 2 Key Timing Parameters Speed Grade -667 -53E -40E Industry Nomenclature PC2-5300 PC2-4200 PC2-3200 Data Rate MT/s CL = 5 667 CL = 4 533 400 CL = 3 tRCD ns tRP ns |
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