IPU05N03LA G

IPU05N03LA G Datasheet

IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G

Part	Datasheet
IPU05N03LA G	IPU05N03LA G (pdf)

Related Parts	Information
IPF05N03LA G	IPF05N03LA G
IPD05N03LA G	IPD05N03LA G
IPU05N03LA	IPU05N03LA
IPS05N03LA G	IPS05N03LA G

PDF Datasheet Preview
Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Product Summary V DS R DS on ,max SMD version ID 25 V 50 A Type IPD05N03LA IPF05N03LA IPPaSc0k5aNg0e3LA IMPaUr0k5inNg03LA IPD05N03LA IPF05N03LA IPS05N03LA Package Ordering Code Marking P-TO252-3-11 Q67042-S4144 05N03LA P-TO252-3-23 Q67042-S 05N03LA P-TOP2-5T2O-32-5111-3-11 P-QT6O7205422--3S-23 05PN-T0O3L2A51-3-11 05N0P3-LTAO251-3-21 05QN60730L4A2-S4230 050N5N030L3ALA IPU05N03LA P-TO251-3-1 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=45 A, R GS=25 dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 50 350 300 ±20 94 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB

PDF Datasheet Preview

Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1 for target application
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant

IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G

Product Summary V DS R DS on ,max SMD version ID
25 V 50 A

Type IPD05N03LA IPF05N03LA IPPaSc0k5aNg0e3LA IMPaUr0k5inNg03LA

IPD05N03LA

IPF05N03LA

IPS05N03LA

Package
Ordering Code Marking

P-TO252-3-11 Q67042-S4144 05N03LA

P-TO252-3-23 Q67042-S
05N03LA

P-TOP2-5T2O-32-5111-3-11 P-QT6O7205422--3S-23
05PN-T0O3L2A51-3-11
05N0P3-LTAO251-3-21 05QN60730L4A2-S4230 050N5N030L3ALA

IPU05N03LA

P-TO251-3-1 05N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=45 A, R GS=25
dv /dt

I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 50 350 300
±20 94 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-04-14

IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G

Parameter

Symbol Conditions
min.

Values typ.

Unit max.

Thermal characteristics

Thermal resistance, junction - case R thJC

SMD version, device on PCB

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Datasheet ID: IPU05N03LAG 638129