MT18HTF6472AY-53EB2

MT18HTF6472AY-53EB2 Datasheet

MT18HTF6472AY 512MB MT18HTF12872AY 1GB MT18HTF25672AY 2GB MT18HTF51272AY 4GB

Part	Datasheet
MT18HTF6472AY-53EB2	MT18HTF6472AY-53EB2 (pdf)

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MT18HTF12872AY-667B3	MT18HTF12872AY-667B3
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MT18HTF25672AY-40EA1	MT18HTF25672AY-40EA1
MT18HTF12872AY-53EB1	MT18HTF12872AY-53EB1
MT18HTF12872AY-40EB1	MT18HTF12872AY-40EB1
MT18HTF6472AY-40EB2	MT18HTF6472AY-40EB2
MT18HTF25672AY-40ED1	MT18HTF25672AY-40ED1
MT18HTF25672AY-667A3	MT18HTF25672AY-667A3
MT18HTF25672AY-53ED1	MT18HTF25672AY-53ED1
MT18HTF12872AY-667D4	MT18HTF12872AY-667D4
MT18HTF12872AY-80ED4	MT18HTF12872AY-80ED4
MT18HTF12872AY-53ED4	MT18HTF12872AY-53ED4

PDF Datasheet Preview
512MB, 1GB, 2GB, 4GB x72, DR 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT18HTF6472AY 512MB MT18HTF12872AY 1GB MT18HTF25672AY 2GB MT18HTF51272AY 4GB • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 512MB 64 Meg x 72 , 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , 4GB 512 Meg x 72 • VDD = VDDQ 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Dual rank Figure 1 240-Pin UDIMM MO-237 R/C G or RC/ B Module Height 30mm 1.181in. Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM lead-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 3 2.5ns CL = 6 DDR2-800 3 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 Marking None I -80E -800 -667 -53E -40E Contact Micron for industrial temperature module offerings. CL = CAS READ latency. Not available only in 512MB module density. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E

PDF Datasheet Preview

512MB, 1GB, 2GB, 4GB x72, DR 240-Pin DDR2 SDRAM UDIMM Features

DDR2 SDRAM UDIMM

MT18HTF6472AY 512MB MT18HTF12872AY 1GB MT18HTF25672AY 2GB MT18HTF51272AY 4GB
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates PC2-6400, PC2-5300,

PC2-4200, or PC2-3200
• 512MB 64 Meg x 72 , 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , 4GB 512 Meg x 72
• VDD = VDDQ 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Dual rank

Figure 1 240-Pin UDIMM MO-237 R/C G or RC/ B

Module Height 30mm 1.181in.

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 240-pin DIMM lead-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 3 2.5ns CL = 6 DDR2-800 3 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400

Marking

None I
-80E -800 -667 -53E -40E

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency.

Not available only in 512MB module density.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

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Datasheet ID: MT18HTF6472AY-53EB2 648328