MT18HTF12872AY-667B3

MT18HTF12872AY-667B3 Datasheet


MT18HTF6472AY 512MB MT18HTF12872AY 1GB MT18HTF25672AY 2GB MT18HTF51272AY 4GB

Part Datasheet
MT18HTF12872AY-667B3 MT18HTF12872AY-667B3 MT18HTF12872AY-667B3 (pdf)
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PDF Datasheet Preview
512MB, 1GB, 2GB, 4GB x72, DR 240-Pin DDR2 SDRAM UDIMM Features

DDR2 SDRAM UDIMM

MT18HTF6472AY 512MB MT18HTF12872AY 1GB MT18HTF25672AY 2GB MT18HTF51272AY 4GB
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates PC2-6400, PC2-5300,

PC2-4200, or PC2-3200
• 512MB 64 Meg x 72 , 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , 4GB 512 Meg x 72
• VDD = VDDQ 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Dual rank

Figure 1 240-Pin UDIMM MO-237 R/C G or RC/ B

Module Height 30mm 1.181in.

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 240-pin DIMM lead-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 3 2.5ns CL = 6 DDR2-800 3 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400

Marking

None I
-80E -800 -667 -53E -40E

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency.

Not available only in 512MB module density.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E
More datasheets: 179D | 289D | 179G | 298C | 289G | 179E | 298E | 298G | 289E | LTDL-TA50A


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Datasheet ID: MT18HTF12872AY-667B3 648328