MT16HTF25664AY-667E1

MT16HTF25664AY-667E1 Datasheet

MT16HTF6464AY 512MB MT16HTF12864AY 1GB MT16HTF25664AY 2GB MT16HTF51264AY 4GB

Part	Datasheet
MT16HTF25664AY-667E1	MT16HTF25664AY-667E1 (pdf)

Related Parts	Information
MT16HTF25664AY-1GAE1	MT16HTF25664AY-1GAE1

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512MB, 1GB, 2GB, 4GB x64, DR 240-Pin DDR2 UDIMM Features DDR2 SDRAM UDIMM MT16HTF6464AY 512MB MT16HTF12864AY 1GB MT16HTF25664AY 2GB MT16HTF51264AY 4GB • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates PC2-8500, PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 512MB 64 Meg x 64 , 1GB 128 Meg x 64 , 2GB 256 Meg x 64 , 4GB 512 Meg x 64 • VDD = VDDQ 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Dual rank Figure 1 240-Pin UDIMM MO-237 R/C B and E Module height 30.0mm 1.18in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM lead-free • Frequency/CL2 1.875ns CL = 7 DDR2-1066 3 2.5ns CL = 5 DDR2-800 4 2.5ns CL = 6 DDR2-800 4 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-5335 5.0ns CL = 3 DDR2-400 5 Marking None I -1GA -80E -800 -667 -53E -40E Contact Micron for industrial temperature module offerings. Table 1 Key Timing Parameters Speed Grade -1GA -80E -800 -667 -53E -40E Industry Nomenclature PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 CL = 7 1066 Data Rate MT/s CL = 6 CL = 5 CL = 4 CL = 3 400 tRCD ns 15 tRP ns 15 tRC ns 60 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512MB, 1GB, 2GB, 4GB x64, DR 240-Pin DDR2 UDIMM Features Table 2 Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address 512MB 8K 8K A[12:0] 4 BA[1:0] 256Mb 32 Meg x 8 1K A[9:0] 2 S#[1:0] 1GB 8K 16K A[13:0] 4 BA[1:0] 512Mb 64 Meg x 8 1K A[9:0] 2 S#[1:0] 2GB 8K 16K A[13:0] 8 BA[2:0] 1Gb 128 Meg x 8 1K A[9:0] 2 S#[1:0] 4GB 8K 32K A[14:0] 8 BA[2:0] 2Gb 256 Meg x 8 1K A[9:0] 2 S#[1:0]

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512MB, 1GB, 2GB, 4GB x64, DR 240-Pin DDR2 UDIMM Features

DDR2 SDRAM UDIMM

MT16HTF6464AY 512MB MT16HTF12864AY 1GB MT16HTF25664AY 2GB MT16HTF51264AY 4GB
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates PC2-8500, PC2-6400,

PC2-5300, PC2-4200, or PC2-3200
• 512MB 64 Meg x 64 , 1GB 128 Meg x 64 , 2GB 256 Meg x 64 , 4GB 512 Meg x 64
• VDD = VDDQ 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Dual rank

Figure 1 240-Pin UDIMM MO-237 R/C B and E

Module height 30.0mm 1.18in

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 240-pin DIMM lead-free
• Frequency/CL2 1.875ns CL = 7 DDR2-1066 3 2.5ns CL = 5 DDR2-800 4 2.5ns CL = 6 DDR2-800 4 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-5335 5.0ns CL = 3 DDR2-400 5

Marking

None I
-1GA -80E -800 -667 -53E -40E

Contact Micron for industrial temperature module offerings.

Table 1 Key Timing Parameters

Speed Grade -1GA
-80E -800 -667 -53E -40E

Industry Nomenclature

PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200

CL = 7 1066

Data Rate MT/s

CL = 6 CL = 5 CL = 4

CL = 3 400
tRCD ns 15
tRP ns 15
tRC ns 60 55

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB, 2GB, 4GB x64, DR 240-Pin DDR2 UDIMM Features

Table 2 Addressing

Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address
512MB 8K
8K A[12:0] 4 BA[1:0] 256Mb 32 Meg x 8 1K A[9:0] 2 S#[1:0]
1GB 8K 16K A[13:0] 4 BA[1:0] 512Mb 64 Meg x 8 1K A[9:0] 2 S#[1:0]
2GB 8K 16K A[13:0] 8 BA[2:0] 1Gb 128 Meg x 8 1K A[9:0] 2 S#[1:0]
4GB 8K 32K A[14:0] 8 BA[2:0] 2Gb 256 Meg x 8 1K A[9:0] 2 S#[1:0]

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Datasheet ID: MT16HTF25664AY-667E1 648306