PC28F800C3BD70A

PC28F800C3BD70A Datasheet

Part	Datasheet
PC28F800C3BD70A	PC28F800C3BD70A (pdf)

Related Parts	Information
GT28F320C3BA110	GT28F320C3BA110
GT28F320C3TA100SB93	GT28F320C3TA100SB93
GT28F320C3BA100SB93	GT28F320C3BA100SB93
TE28F160C3BD90A	TE28F160C3BD90A
TE28F320C3TD70A	TE28F320C3TD70A
RC28F160C3BD70A	RC28F160C3BD70A
TE28F160C3TD70A	TE28F160C3TD70A
GE28F160C3TD70A	GE28F160C3TD70A
TE28F160C3BD70A	TE28F160C3BD70A
RC28F320C3BD70A	RC28F320C3BD70A
RC28F160C3TD70A	RC28F160C3TD70A
RC28F320C3TD70A	RC28F320C3TD70A
GT28F320C3TA110	GT28F320C3TA110
GT28F160C3TA110	GT28F160C3TA110
RC28F320C3TA110	RC28F320C3TA110
JS28F320C3BD70A	JS28F320C3BD70A
PC28F320C3BD70A	PC28F320C3BD70A
PC28F160C3TD70A	PC28F160C3TD70A
JS28F160C3BD70A	JS28F160C3BD70A
PC28F160C3BD70A	PC28F160C3BD70A
JS28F160C3TD70A	JS28F160C3TD70A
JS28F320C3TD70	JS28F320C3TD70
GE28F320C3BC90	GE28F320C3BC90

PDF Datasheet Preview
Advanced+ Boot Block Flash Memory C3 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Datasheet Product Features • Flexible SmartVoltage Technology V Read/Program/Erase 12 V for Fast Production Programming • V or V I/O Option Reduces Overall System Power • High Performance V 70 ns Max Access Time • Optimized Architecture for Code Plus Data Storage Eight 4 Kword Blocks, Top or Bottom Parameter Boot Up to One Hundred-Twenty-Seven 32 Kword Blocks Fast Program Suspend Capability Fast Erase Suspend Capability • Flexible Block Locking Lock/Unlock Any Block Full Protection on Power-Up WP# Pin for Hardware Block Protection • Low Power Consumption 9 mA Typical Read 7 A Typical Standby with Automatic Power Savings Feature APS • Extended Temperature Operation °C to +85 °C • 128-bit Protection Register 64 bit Unique Device Identifier 64 bit User Programmable OTP Cells • Extended Cycling Capability Minimum 100,000 Block Erase Cycles • Software Flash Data Integrator FDI Supports Top or Bottom Boot Storage, Streaming Data e.g., voice Intel Basic Command Set Common Flash Interface CFI • Standard Surface Mount Packaging 48-Ball µBGA/VFBGA 64-Ball Easy BGA Packages 48-Lead TSOP Package • ETOX VIII µm Flash Technology 16, 32 Mbit • ETOX VII µm Flash Technology 16, 32, 64 Mbit • ETOX VI µm Flash Technology 8, 16 and 32 Mbit The Advanced+ Book Block Flash Memory C3 device, manufactured on Intel’s latest µm and µm technologies, represents a feature-rich solution for low-power applications. The C3 device incorporates low-voltage capability 3 V read, program, and erase with highspeed, low-power operation. Flexible block locking allows any block to be independently locked or unlocked. Add to this the Flash Data Integrator FDI software and you have a costeffective, flexible, monolithic code plus data storage solution. Advanced+ Boot Block Flash Memory C3 products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA packages. Additional information on this product family can be obtained by accessing the Flash website: Notice This specification is subject to change without notice. Verify with your local Intel sales office that you have the latest datasheet before finalizing a design. Order Number 290645-017 October 2003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The 28F800C3, 28F160C3, 28F320C3, 28F640C3 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800548-4725 or by visiting Intel's website at Copyright Intel Corporation, 2003 Third-party brands and names are the property of their respective owners. Datasheet Contents Contents Document Purpose Nomenclature Device Description Product Overview Ballout Diagram Signal Descriptions Block Diagram Memory Map Device Operations Bus Operations Read Write Output Disable Reset Modes of Operation Read Mode Read Identifier CFI Query Read Status Clear Status Register Program Mode 12-Volt Production Suspending and Resuming Program Erase Mode Suspending and Resuming Erase Security Modes Flexible Block Locking Locked State Unlocked Lock-Down Reading Block-Lock Locking Operations during Erase Suspend Status Register Error Checking 128-Bit Protection Register Reading the Protection Register Programming the Protection Locking the Protection Register VPP Program and Erase Voltages Datasheet Contents Program 31 Power 32 Active Power 32 Automatic Power Savings APS 32 Standby Power 32 Deep Power-Down 32 Power and Reset Considerations 33 Power-Up/Down 33 RP# Connected to System Reset 33 VCC, VPP and RP# Transitions 33 Power Supply 34 Thermal and DC Characteristics 34 Absolute Maximum Ratings 34 Operating Conditions 35 DC Current 35 DC Voltage 38 AC Characteristics 39 AC Read Characteristics 39 AC Write 43 Erase and Program Timings 47 Reset Specifications 48 AC I/O Test Conditions 49 Device 49 Appendix A Write State Machine Appendix B Flow Charts Appendix C Common Flash Appendix D Mechanical Appendix E Additional Information Appendix F Ordering Information Datasheet Contents 07/21/98 10/03/98 12/04/98 12/31/98 02/24/99 06/10/99 03/20/00 04/24/00 10/12/00 7/20/01 10/02/01 2/05/02 Version -001 -002 -003 -004 -005 -006 -007 -008 -009 -010 -011 -012 -013 Original version 48-Lead TSOP package diagram change µBGA package diagrams change 32-Mbit ordering information change Section 6 CFI Query Structure Output Table Change Table C2 CFI Primary-Vendor Specific Extended Query Table Change for Optional Features and Command Support change Table C8 Protection Register Address Change IPPD test conditions clarification Section µBGA package top side mark information clarification Section 6 Byte-Wide Protection Register Address change VIH Specification change Section VIL Maximum Specification change Section ICCS test conditions clarification Section Added Command Sequence Error Note Table 7 Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash Memory Family. Added tBHWH/tBHEH and tQVBL Section Programming the Protection Register clarification Section Removed all references to x8 configurations Removed reference to 40-Lead TSOP from front page Added Easy BGA package Section Removed V I/O references Locking Operations Flowchart changed Appendix B Added tWHGL Section CFI Primary Vendor-Specific Extended Query changed Appendix C Max ICCD changed to 25 µA Table 10, added note indicating VCCMax = V for 32-Mbit device Added specifications for micron product offerings throughout document Added 64-Mbit density Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product offering. Changed VccMax=3.3V reference to indicate that the affected product is the 0.25µm 32Mbit device. Minor text edits throughout document. Added 1.8v I/O operation documentation where applicable Added TSOP PCN ‘Pin-1’ indicator information Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’ Added ‘Vssq’ to Pin Descriptions Information Removed µm references in DC characteristics table Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords Minor text edits throughout document Added specifications for micron product offerings throughout document Corrected Iccw / Ippw / Icces /Ippes values. Added mechanicals for 16Mb and 64Mb Minor text edits throughout document. Datasheet Contents 4/05/02 3/06/03 10/03 Version -014 -016 -017 Datasheet Advanced+ Boot Block Flash Memory C3 Introduction Document Purpose This datasheet contains the specifications for the Advanced+ Boot Block Flash Memory C3 device family. These flash memories add features such as instant block locking and protection registers that can be used to enhance the security of systems. Nomenclature 0x 0b Byte Word Kword Mword Kb Mb APS CUI OTP PR PRD PLR RFU SR SRD WSM Hexadecimal prefix Binary prefix 8 bits 16 bits 1024 words 1,048,576 words 1024 bits 1024 bytes 1,048,576 bits 1,048,576 bytes Automatic Power Savings Command User Interface One Time Programmable Protection Register Protection Register Data Protection Lock Register Reserved for Future Use Status Register Status Register Data Write State Machine Conventions The terms pin and signal are often used interchangeably to refer to the external signal connections on the package. ball is the term used for CSP . Group Membership Brackets Square brackets will be used to designate group membership or to define a group of signals with similar function i.e. A[21:1], SR[4:1] Set When referring to registers, the term set means the bit is a logical Clear When referring to registers, the term clear means the bit is a logical Block A group of bits or words that erase simultaneously with one block erase instruction. Main Block A block that contains 32 Kwords. Parameter Block A block that contains 4 Kwords. Datasheet Advanced+ Boot Block Flash Memory C3 Device Description This section provides an overview of the Advanced+ Boot Block Flash Memory C3 device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of the device’s memory map. The rest of the memory array is grouped into 32 Kword main blocks. The device supports read-array mode operations at various I/O voltages V and 3 V and erase and program operations at 3 V or 12 V VPP. With the 3 V I/O option, VCC and VPP can be tied together for a simple, ultra-low-power design. In addition to I/O voltage flexibility, the dedicated VPP input provides complete data protection when VPP VPPLK. The device features a 128-bit protection register enabling security techniques and data protection schemes through a combination of factory-programmed and user-programmable OTP data registers. Zero-latency locking/unlocking on any memory block provides instant and complete protection for critical system code and data. Additional block lock-down capability provides hardware protection where software commands alone cannot change the block’s protection status. A command User Interface CUI serves as the interface between the system processor and internal operation of the device. A valid command sequence issued to the CUI initiates device automation. An internal Write State Machine WSM automatically executes the algorithms and timings necessary for block erase, program, and lock-bit configuration operations. The device offers three low-power saving features Automatic Power Savings APS , standby mode, and deep power-down mode. The device automatically enters APS mode following read cycle completion. Standby mode begins when the system deselects the flash memory by deasserting CE#. The deep power-down mode begins when RP# is asserted, which deselects the memory and places the outputs in a high-impedance state, producing ultra-low power savings. Combined, these three power-savings features significantly enhanced power consumption flexibility. Ballout Diagram The C3 device is available in 48-lead TSOP, 48-ball VF BGA, 48-ball µBGA, and Easy BGA packages. Refer to Figure 1 on page 9, Figure 3 on page 11, and Figure 4 on page 12, respectively. Datasheet Advanced+ Boot Block Flash Memory C3 Figure 48-Lead TSOP Package 64 M 32 M A8 A21 A20 Advanced+ Boot Block 48-Lead TSOP 12 mm x 20 mm TOP VIEW VCCQ DQ15 The topside marking on 8 Mb, 16 Mb, and 32 Mb Advanced and Advanced + Boot Block 48L TSOP products will convert to a white ink triangle as a Pin 1 indicator. Products without the white triangle will continue to use a dimple as a Pin 1 indicator. There are no other changes in package size, materials, functionality, customer handling, or manufacturability. Product will continue to meet Intel stringent quality requirements. Products affected are Intel Ordering Codes shown in Table Table 48-Lead TSOP Extended 64 Mbit Extended 32 Mbit TE28F640C3TC80 TE28F640C3BC80 TE28F320C3TD70 TE28F320C3BD70 TE28F320C3TC70 TE28F320C3BC70 TE28F320C3TC90 TE28F320C3BC90 TE28F320C3TA100 TE28F320C3BA100 TE28F320C3TA110 TE28F320C3BA110 Extended 16 Mbit TE28F160C3TD70 TE28F160C3BD70 TE28F160C3TC80 TE28F160C3BC80 TE28F160C3TA90 TE28F160C3BA90 TE28F160C3TA110 TE28F160C3BA110 Extended 8 Mbit TE28F800C3TA90 TE28F800C3BA90 TE28F800C3TA110 TE28F800C3BA110 Datasheet Advanced+ Boot Block Flash Memory C3 Figure 48-Ball µBGA* and 48-Ball Very Fine Pitch BGA VF BGA Chip Size Package Top View, Ball Down 1,2,3 VPP WP# A19 VCCQ F GND VCC D10 NOTES Shaded connections indicate the upgrade address connections. Routing is not recommended in this area. A19 denotes 16 Mbit A20 denotes 32 Mbit A21 denotes 64 Mbit. Unused address balls are not populated. Datasheet Advanced+ Boot Block Flash Memory C3 Figure 64-Ball Easy BGA Package1,2 1234567 8 A1 A6 A18 VPP VCC GND A10 A15 B A17 A19 1 RP# DU A20 1 A11 A14 A3 A7 WP# WE# DU A21 1 A12 A13 A4 A5 DU A8 A9 E DQ8 DQ1 DQ9 DQ3 DQ12 DQ6 DU F CE# DQ0 DQ10 DQ11 DQ5 DQ14 DU G A0 VSSQ DQ2 DQ4 DQ13 DQ15 VSSQ H A22 2 OE# VCCQ VCC VSSQ DQ7 VCCQ DU A16 DU 8765432 1 A A15 A10 GND VCC VPP A18 A6 A1 Appendix F Ordering Information Figure Component Ordering Information T E2 8 F 3 2 0 C3 T C7 0 Package TE = 48-Lead TSOP GT = 48-Ball µBGA* CSP GE = VF BGA CSP RC = Easy BGA Product line designator for all Flash products Device Density 640 = x16 64 Mbit 320 = x16 32 Mbit 160 = x16 16 Mbit 800 = x16 8 Mbit Access Speed ns 70, 80, 90, 100, 110 Lithography A = µm C = µm D = µm T = Top Parameter Boot B = Bottom Parameter Boot Product Family C3 = 3 Volt Advanced+ Boot Block VCC = V VPP = V or VALID COMBINATIONS All Extended Temperature 48-Lead TSOP 48-Ball µBGA* CSP 48-Ball VF BGA Easy BGA Extended TE28F640C3TC80 64 Mbit TE28F640C3BC80 GE28F640C3TC80 GE28F640C3BC80 RC28F640C3TC80 RC28F640C3BC80 Extended 32 Mbit TE28F320C3TD70 TE28F320C3BD70 TE28F320C3TC70 TE28F320C3BC70 TE28F320C3TC90 TE28F320C3BC90 TE28F320C3TA100 TE28F320C3BA100 TE28F320C3TA110 TE28F320C3BA110 GT28F320C3TA100 GT28F320C3BA100 GT28F320C3TA110 GT28F320C3BA110 GE28F320C3TD70 GE28F320C3BD70 GE28F320C3TC70 GE28F320C3BC70 GE28F320C3TC90 GE28F320C3BC90 RC28F320C3TD70 RC28F320C3BD70 RC28F320C3TD90 RC28F320C3BD90 RC28F320C3TC90 RC28F320C3BC90 RC28F320C3TA100 RC28F320C3BA100 RC28F320C3TA110 RC28F320C3BA110 Extended 16 Mbit TE28F160C3TD70 TE28F160C3BD70 TE28F160C3TC70 TE28F160C3BC70 TE28F160C3TC80 TE28F160C3BC80 TE28F160C3TC90 TE28F160C3BC90 TE28F160C3TA90 TE28F160C3BA90 TE28F160C3TA110 TE28F160C3BA110 GT28F160C3TA90 GT28F160C3BA90

PDF Datasheet Preview

Advanced+ Boot Block Flash Memory C3
28F800C3, 28F160C3, 28F320C3, 28F640C3 x16

Datasheet

Product Features
• Flexible SmartVoltage Technology V Read/Program/Erase 12 V for Fast Production Programming
• V or V I/O Option

Reduces Overall System Power
• High Performance V 70 ns Max Access Time
• Optimized Architecture for Code Plus Data Storage Eight 4 Kword Blocks, Top or Bottom Parameter Boot Up to One Hundred-Twenty-Seven 32 Kword Blocks Fast Program Suspend Capability Fast Erase Suspend Capability
• Flexible Block Locking Lock/Unlock Any Block Full Protection on Power-Up WP# Pin for Hardware Block Protection
• Low Power Consumption 9 mA Typical Read 7 A Typical Standby with Automatic Power Savings Feature APS
• Extended Temperature Operation °C to +85 °C
• 128-bit Protection Register 64 bit Unique Device Identifier 64 bit User Programmable OTP Cells
• Extended Cycling Capability Minimum 100,000 Block Erase Cycles
• Software Flash Data Integrator FDI Supports Top or Bottom Boot Storage, Streaming Data e.g., voice Intel Basic Command Set Common Flash Interface CFI
• Standard Surface Mount Packaging 48-Ball µBGA*/VFBGA 64-Ball Easy BGA Packages 48-Lead TSOP Package
• ETOX VIII µm Flash Technology
16, 32 Mbit
• ETOX VII µm Flash Technology 16, 32, 64 Mbit
• ETOX VI µm Flash Technology 8, 16 and 32 Mbit

The Advanced+ Book Block Flash Memory C3 device, manufactured on Intel’s latest µm and µm technologies, represents a feature-rich solution for low-power applications. The C3 device incorporates low-voltage capability 3 V read, program, and erase with highspeed, low-power operation. Flexible block locking allows any block to be independently locked or unlocked. Add to this the Flash Data Integrator FDI software and you have a costeffective, flexible, monolithic code plus data storage solution. Advanced+ Boot Block Flash Memory C3 products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA packages. Additional information on this product family can be obtained by accessing the Flash website:

Notice This specification is subject to change without notice. Verify with your local Intel sales office that you have the latest datasheet before finalizing a design.

Order Number 290645-017 October 2003

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications.

Intel may make changes to specifications and product descriptions at any time, without notice.

Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

The 28F800C3, 28F160C3, 28F320C3, 28F640C3 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request.

Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800548-4725 or by visiting Intel's website at

Copyright Intel Corporation, 2003
*Third-party brands and names are the property of their respective owners.

Datasheet

Contents

Contents

Document Purpose Nomenclature

Device Description

Product Overview Ballout Diagram Signal Descriptions Block Diagram Memory Map

Device Operations

Bus Operations Read Write Output Disable Reset

Modes of Operation

Read Mode Read Identifier CFI Query Read Status Clear Status Register

Program Mode 12-Volt Production Suspending and Resuming Program

Erase Mode Suspending and Resuming Erase

Security Modes

Flexible Block Locking Locked State Unlocked Lock-Down

Reading Block-Lock Locking Operations during Erase Suspend Status Register Error Checking 128-Bit Protection Register

Reading the Protection Register Programming the Protection Locking the Protection Register VPP Program and Erase Voltages

Datasheet

Contents

Program 31

Power 32 Active Power 32 Automatic Power Savings APS 32 Standby Power 32 Deep Power-Down 32 Power and Reset Considerations 33 Power-Up/Down 33 RP# Connected to System Reset 33 VCC, VPP and RP# Transitions 33 Power Supply 34

Thermal and DC Characteristics 34 Absolute Maximum Ratings 34 Operating Conditions 35 DC Current 35 DC Voltage 38

AC Characteristics 39 AC Read Characteristics 39 AC Write 43 Erase and Program Timings 47 Reset Specifications 48 AC I/O Test Conditions 49 Device 49

Appendix A Write State Machine

Appendix B Flow Charts

Appendix C Common Flash

Appendix D Mechanical

Appendix E Additional Information
Appendix F Ordering Information

Datasheet

Contents
07/21/98
10/03/98
12/04/98 12/31/98 02/24/99 06/10/99 03/20/00 04/24/00 10/12/00
7/20/01
10/02/01 2/05/02

Version -001
-002
-003 -004 -005 -006 -007 -008 -009 -010
-011
-012 -013

Original version
48-Lead TSOP package diagram change µBGA package diagrams change 32-Mbit ordering information change Section 6 CFI Query Structure Output Table Change Table C2 CFI Primary-Vendor Specific Extended Query Table Change for Optional Features and Command Support change Table C8 Protection Register Address Change IPPD test conditions clarification Section µBGA package top side mark information clarification Section 6

Byte-Wide Protection Register Address change VIH Specification change Section VIL Maximum Specification change Section ICCS test conditions clarification Section Added Command Sequence Error Note Table 7 Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash Memory Family.

Added tBHWH/tBHEH and tQVBL Section Programming the Protection Register clarification Section

Removed all references to x8 configurations

Removed reference to 40-Lead TSOP from front page

Added Easy BGA package Section Removed V I/O references Locking Operations Flowchart changed Appendix B Added tWHGL Section CFI Primary Vendor-Specific Extended Query changed Appendix C

Max ICCD changed to 25 µA Table 10, added note indicating VCCMax = V for 32-Mbit device Added specifications for micron product offerings throughout document Added 64-Mbit density

Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product offering. Changed VccMax=3.3V reference to indicate that the affected product is the 0.25µm 32Mbit device. Minor text edits throughout document.
Added 1.8v I/O operation documentation where applicable Added TSOP PCN ‘Pin-1’ indicator information Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’ Added ‘Vssq’ to Pin Descriptions Information Removed µm references in DC characteristics table Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords Minor text edits throughout document

Added specifications for micron product offerings throughout document

Corrected Iccw / Ippw / Icces /Ippes values. Added mechanicals for 16Mb and 64Mb Minor text edits throughout document.

Datasheet

Contents
4/05/02
3/06/03 10/03

Version
-014 -016 -017

Datasheet

Advanced+ Boot Block Flash Memory C3

Introduction

Document Purpose

This datasheet contains the specifications for the Advanced+ Boot Block Flash Memory C3 device family. These flash memories add features such as instant block locking and protection registers that can be used to enhance the security of systems.

Nomenclature
0x 0b Byte Word Kword Mword Kb Mb APS CUI OTP PR PRD PLR RFU SR SRD WSM

Hexadecimal prefix Binary prefix 8 bits 16 bits 1024 words 1,048,576 words 1024 bits 1024 bytes 1,048,576 bits 1,048,576 bytes Automatic Power Savings Command User Interface One Time Programmable Protection Register Protection Register Data Protection Lock Register Reserved for Future Use Status Register Status Register Data Write State Machine

Conventions

The terms pin and signal are often used interchangeably to refer to the external signal connections on the package. ball is the term used for CSP . Group Membership Brackets Square brackets will be used to designate group membership or to define a group of signals with similar function i.e. A[21:1], SR[4:1] Set When referring to registers, the term set means the bit is a logical Clear When referring to registers, the term clear means the bit is a logical Block A group of bits or words that erase simultaneously with one block erase instruction. Main Block A block that contains 32 Kwords. Parameter Block A block that contains 4 Kwords.

Datasheet

Advanced+ Boot Block Flash Memory C3

Device Description

This section provides an overview of the Advanced+ Boot Block Flash Memory C3 device features, packaging, signal naming, and device architecture.

Product Overview

The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of the device’s memory map. The rest of the memory array is grouped into 32 Kword main blocks.

The device supports read-array mode operations at various I/O voltages V and 3 V and erase and program operations at 3 V or 12 V VPP. With the 3 V I/O option, VCC and VPP can be tied together for a simple, ultra-low-power design. In addition to I/O voltage flexibility, the dedicated VPP input provides complete data protection when VPP VPPLK.

The device features a 128-bit protection register enabling security techniques and data protection schemes through a combination of factory-programmed and user-programmable OTP data registers. Zero-latency locking/unlocking on any memory block provides instant and complete protection for critical system code and data. Additional block lock-down capability provides hardware protection where software commands alone cannot change the block’s protection status.

A command User Interface CUI serves as the interface between the system processor and internal operation of the device. A valid command sequence issued to the CUI initiates device automation. An internal Write State Machine WSM automatically executes the algorithms and timings necessary for block erase, program, and lock-bit configuration operations.

The device offers three low-power saving features Automatic Power Savings APS , standby mode, and deep power-down mode. The device automatically enters APS mode following read cycle completion. Standby mode begins when the system deselects the flash memory by deasserting CE#. The deep power-down mode begins when RP# is asserted, which deselects the memory and places the outputs in a high-impedance state, producing ultra-low power savings. Combined, these three power-savings features significantly enhanced power consumption flexibility.

Ballout Diagram

The C3 device is available in 48-lead TSOP, 48-ball VF BGA, 48-ball µBGA, and Easy BGA packages. Refer to Figure 1 on page 9, Figure 3 on page 11, and Figure 4 on page 12, respectively.

Datasheet

Advanced+ Boot Block Flash Memory C3

Figure 48-Lead TSOP Package
64 M 32 M

A8 A21 A20

Advanced+ Boot Block
48-Lead TSOP 12 mm x 20 mm

TOP VIEW

VCCQ

DQ15
The topside marking on 8 Mb, 16 Mb, and 32 Mb Advanced and Advanced + Boot Block 48L TSOP products will convert to a white ink triangle as a Pin 1 indicator. Products without the white triangle will continue to use a dimple as a Pin 1 indicator. There are no other changes in package size, materials, functionality, customer handling, or manufacturability. Product will continue to meet Intel stringent quality requirements. Products affected are Intel Ordering Codes shown in Table

Table 48-Lead TSOP

Extended 64 Mbit

Extended 32 Mbit

TE28F640C3TC80 TE28F640C3BC80

TE28F320C3TD70 TE28F320C3BD70

TE28F320C3TC70 TE28F320C3BC70

TE28F320C3TC90 TE28F320C3BC90

TE28F320C3TA100 TE28F320C3BA100

TE28F320C3TA110 TE28F320C3BA110

Extended 16 Mbit

TE28F160C3TD70 TE28F160C3BD70

TE28F160C3TC80 TE28F160C3BC80

TE28F160C3TA90 TE28F160C3BA90

TE28F160C3TA110 TE28F160C3BA110

Extended 8 Mbit

TE28F800C3TA90 TE28F800C3BA90

TE28F800C3TA110 TE28F800C3BA110

Datasheet

Advanced+ Boot Block Flash Memory C3

Figure 48-Ball µBGA* and 48-Ball Very Fine Pitch BGA VF BGA Chip Size Package Top View, Ball Down 1,2,3

VPP WP# A19

VCCQ

F GND

VCC D10

NOTES Shaded connections indicate the upgrade address connections. Routing is not recommended in this area. A19 denotes 16 Mbit A20 denotes 32 Mbit A21 denotes 64 Mbit. Unused address balls are not populated.

Datasheet

Advanced+ Boot Block Flash Memory C3

Figure 64-Ball Easy BGA Package1,2
1234567 8

A1 A6 A18 VPP VCC GND A10 A15 B

A17 A19 1 RP# DU A20 1 A11 A14

A3 A7 WP# WE# DU A21 1 A12 A13

A4 A5 DU A8 A9

E DQ8 DQ1 DQ9 DQ3 DQ12 DQ6 DU

F CE# DQ0 DQ10 DQ11 DQ5 DQ14 DU

G A0 VSSQ DQ2 DQ4 DQ13 DQ15 VSSQ

H A22 2 OE# VCCQ VCC VSSQ DQ7 VCCQ

DU A16 DU
8765432 1

A A15 A10 GND VCC VPP A18 A6 A1
Appendix F Ordering Information
Figure Component Ordering Information

T E2 8 F 3 2 0 C3 T C7 0

Package TE = 48-Lead TSOP GT = 48-Ball µBGA* CSP GE = VF BGA CSP RC = Easy BGA

Product line designator for all Flash products

Device Density 640 = x16 64 Mbit 320 = x16 32 Mbit 160 = x16 16 Mbit 800 = x16 8 Mbit

Access Speed ns 70, 80, 90, 100, 110

Lithography A = µm C = µm D = µm

T = Top Parameter Boot B = Bottom Parameter Boot

Product Family C3 = 3 Volt Advanced+ Boot Block VCC = V VPP = V or

VALID COMBINATIONS All Extended Temperature
48-Lead TSOP
48-Ball µBGA* CSP
48-Ball VF BGA

Easy BGA

Extended TE28F640C3TC80 64 Mbit TE28F640C3BC80

GE28F640C3TC80 GE28F640C3BC80

RC28F640C3TC80 RC28F640C3BC80

Extended 32 Mbit

TE28F320C3TD70 TE28F320C3BD70

TE28F320C3TC70 TE28F320C3BC70

TE28F320C3TC90 TE28F320C3BC90

TE28F320C3TA100 TE28F320C3BA100

TE28F320C3TA110 TE28F320C3BA110

GT28F320C3TA100 GT28F320C3BA100

GT28F320C3TA110 GT28F320C3BA110

GE28F320C3TD70 GE28F320C3BD70

GE28F320C3TC70 GE28F320C3BC70

GE28F320C3TC90 GE28F320C3BC90

RC28F320C3TD70 RC28F320C3BD70

RC28F320C3TD90 RC28F320C3BD90

RC28F320C3TC90 RC28F320C3BC90

RC28F320C3TA100 RC28F320C3BA100

RC28F320C3TA110 RC28F320C3BA110

Extended 16 Mbit

TE28F160C3TD70 TE28F160C3BD70

TE28F160C3TC70 TE28F160C3BC70

TE28F160C3TC80 TE28F160C3BC80

TE28F160C3TC90 TE28F160C3BC90

TE28F160C3TA90 TE28F160C3BA90

TE28F160C3TA110 TE28F160C3BA110

GT28F160C3TA90 GT28F160C3BA90

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PC28F800C3BD70A Datasheet file may be downloaded here without warranties.

Datasheet ID: PC28F800C3BD70A 638919