The AT45DB642 is a 2.7-volt only, dual-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The dual-interface of the AT45DB642 allows a dedicated serial interface to be connected to a DSP and a dedicated parallel interface to be connected to a microcontroller or vice versa.
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AT45DB642-TI (pdf) |
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AT45DB642-TC |
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• Single 2.7V - 3.6V Supply • Dual-interface Architecture Dedicated Serial Interface SPI Modes 0 and 3 Compatible Dedicated Parallel I/O Interface Optional Use • Page Program Operation Single Cycle Reprogram Erase and Program 8192 Pages 1056 Bytes/Page Main Memory • Supports Page and Block Erase Operations • Two 1056-byte SRAM Data Buffers Allows Receiving of Data while Reprogramming the Flash Array • Continuous Read Capability through Entire Array Ideal for Code Shadowing Applications • Low-power Dissipation 4 mA Active Read Current Typical 2 µA CMOS Standby Current Typical • 20 MHz Maximum Clock Frequency Serial Interface • 5 MHz Maximum Clock Frequency Parallel Interface • Hardware Data Protection • Commercial and Industrial Temperature Ranges The AT45DB642 is a 2.7-volt only, dual-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The dual-interface of the AT45DB642 allows a dedicated serial interface to be connected to a DSP and a dedicated parallel interface to be connected to a microcontroller or vice versa. Pin Configurations Pin Name CS SCK/CLK SI SO I/O7 - I/O0 WP RESET RDY/BUSY SER/PAR Function Chip Select Serial Clock/Clock Serial Input Serial Output Parallel Input/Output Hardware Page Write Protect Pin Chip Reset Ready/Busy Serial/Parallel Interface Control DataFlash Card 1 TSOP Top View Type 1 NC 1 NC 2 RDY/BUSY 3 RESET 4 WP 5 NC 6 NC 7 NC 8 VCC 9 GND 10 NC 11 NC 12 NC 13 NC 14 CS 15 SCK/CLK 16 SI* 17 SO* 18 NC 19 NC 20 40 NC 39 NC 38 NC 37 NC 36 NC 35 I/O7* 34 I/O6* 33 I/O5* 32 I/O4* 31 VCCP* 30 GNDP* 29 I/O3* 28 I/O2* 27 I/O1* 26 I/O0* 25 SER/PAR* 24 NC 23 NC 22 NC 21 NC Note: *Optional Use See pin description text for connection information. 7654321 64-megabit 2.7-volt Only Dual-interface AT45DB642 Note See AT45DCB008 Datasheet. Block Diagram However, the use of either interface is purely optional. Its 69,206,016 bits of memory are organized as 8192 pages of 1056 bytes each. In addition to the main memory, the AT45DB642 also contains two SRAM data buffers of 1056 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as reading or writing a continuous data stream. EEPROM emulation bit or byte alterability is easily handled with a selfcontained three step Read-Modify-Write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the uses either a serial interface or a parallel interface to sequentially access its data. The simple sequential access facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size and active pin count. DataFlash supports SPI mode 0 and mode The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. The device operates at clock frequencies up to 20 MHz with a typical active read current consumption of 4 mA. To allow for simple in-system reprogrammability, the AT45DB642 does not require high input voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB642 is enabled through the chip select pin CS and accessed via a three-wire interface consisting of the Serial Input SI , Serial Output SO , and the Serial Clock SCK , or a parallel interface consisting of the parallel input/output pins I/O7 - I/O0 and the clock pin CLK . The SCK and CLK pins are shared and provide the same clocking input to the DataFlash. All programming cycles are self-timed, and no separate erase cycle is required before programming. When the device is shipped from Atmel, the most significant page of the memory array may not be erased. In other words, the contents of the last page may not be filled with FFH. FLASH MEMORY ARRAY PAGE 1056 BYTES SCK/CLK CS RESET VCC GND RDY/BUSY SER/PAR BUFFER 1 1056 BYTES BUFFER 2 1056 BYTES I/O INTERFACE SI SO I/O7 - I/O0 Memory Array To provide optimal flexibility, the memory array of the AT45DB642 is divided into three levels of granularity comprising of sectors, blocks and pages. The “Memory Architecture Diagram” illustrates the breakdown of each level and details the number of pages per sector and block. All program operations to the DataFlash occur on a page-by-page basis however, the optional erase operations can be performed at the block or page level. 2 AT45DB642 AT45DB642 Memory Architecture Diagram SECTOR ARCHITECTURE SECTOR 0 = 8 Pages 8448 bytes 8K + 256 SECTOR 1 = 248 Pages 261,888 bytes 248K + 7936 SECTOR 2 = 256 Pages 270,336 bytes 256K + 8K SECTOR 3 = 256 Pages 270,336 bytes 256K + 8K Ordering Information fSCK MHz ICC mA Active Standby Note Serial Interface Ordering Code AT45DB642-TC AT45DB642-TI AT45DB642 Package 40T Operation Range Commercial 0°C to 70°C Industrial -40°C to 85°C Package Type 40-lead, Plastic Thin Small Outline Package TSOP Packaging Information 40T TSOP PIN 1 0º ~ 8º c Pin 1 Identifier SEATING PLANE GAGE PLANE This package conforms to JEDEC reference MO-142, Variation CD. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum. COMMON DIMENSIONS Unit of Measure = mm SYMBOL A A1 A2 D D1 E L L1 b c e MIN NOM MAX BASIC BASIC NOTE Note 2 Note 2 2325 Orchard Parkway R San Jose, CA 95131 40T, 40-lead 10 x 20 mm Package Plastic Thin Small Outline Package, Type I TSOP 10/18/01 36 AT45DB642 Atmel Headquarters Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 408 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL 41 26-426-5555 FAX 41 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong TEL 852 2721-9778 FAX 852 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL 81 3-3523-3551 FAX 81 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 408 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 408 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL 33 2-40-18-18-18 FAX 33 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France TEL 33 4-42-53-60-00 FAX 33 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL 1 719 576-3300 FAX 1 719 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland TEL 44 1355-803-000 FAX 44 1355-242-743 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL 49 71-31-67-0 FAX 49 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL 1 719 576-3300 FAX 1 719 540-1759 |
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