FGL60N100DTU

FGL60N100DTU Datasheet

FGL60N100D

Part	Datasheet
FGL60N100DTU	FGL60N100DTU (pdf)

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FGL60N100D FGL60N100D IGBT Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications • High Speed Switching • Low Saturation Voltage VCE sat = 2.5V IC = 60A • High Input Impedance • Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 100°C TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FGL60N100D 1000 ± 25 60 42 120 15 176 70 -55 to +150 -55 to +150 Typ. ---- Max. 25 Units V A W °C °C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation FGL60N100D Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage

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FGL60N100D

FGL60N100D

IGBT

Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
• High Speed Switching
• Low Saturation Voltage VCE sat = 2.5V IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

Application

Home Appliance, Induction Heater, IH JAR, Micro Wave Oven

TO-264

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 100°C TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FGL60N100D 1000 ± 25 60 42 120 15 176 70
-55 to +150 -55 to +150

Typ. ----

Max. 25

Units V A W °C °C °C

Units °C/W °C/W °C/W
2002 Fairchild Semiconductor Corporation

FGL60N100D

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

ICES IGES

Collector Cut-Off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

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Datasheet ID: FGL60N100DTU 514632