MLX90248ESO

MLX90248ESO Datasheet

MLX90248

Part	Datasheet
MLX90248ESO	MLX90248ESO (pdf)

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MLX90248 Micropower & Omnipolar Hall Switch Micropower consumption ideal for battery-powered applications Omnipolar, easy to use as output switches with both North and South pole Very High Sensitivity Hall Sensor Chopper stabilized amplifier stage Open-Drain Output Operation down to 1.5V Ultra-Thin QFN package 0.43mm max & Thin SOT23 3L both RoHS Compliant Application Examples Solid State Switch Handheld Wireless Handset Awake Switch Lid close sensor for battery-powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications Ordering Information Part No. MLX90248 Temperature Code E -40°C to 85°C E -40°C to 85°C Package Code SE TSOT-3L LD UTQFN-6L 1 Functional Diagram 2 General Description The MLX90248 OmnipolarTM Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the 90248 will be latched on BOP in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off BRP in the absence of a magnetic field. Page 1 of 11 Data Sheet Jan/09 MLX90248 Micropower & Omnipolar Hall Switch Table of Contents 1 Functional Diagram 1 2 General 1 3 Glossary of Terms 3 4 Absolute Maximum 3 5 Pin Definitions and 3 6 General Electrical Specifications 4 7 Magnetic Specifications 4 8 Outputs Behaviour vs. Magnetic 4 9 Detailed General 5 10 Unique 5 11 Performance Graphs 6 Magnetic Thresholds vs. TA 6 Magnetic Thresholds vs. VDD 6 Current Consumption vs. TA 6 Current Consumption vs. VDD 6 Consumption Period vs. TA 6 Consumption Period vs. VDD 6 Output Saturation Voltage vs. TA 7 Output Switching Characteristics 7 12 Application 7 13 Standard information regarding manufacturability of Melexis products with different soldering 8 14 ESD Precautions 8 15 Package 9 SE Package TSOT-3L 9 LD Package UTQFN-6L 10 16 11 Page 2 of 11 Data Sheet Jan/09 MLX90248 Micropower & Omnipolar Hall Switch 3 Glossary of Terms Gauss, milliTesla mT , Units of magnetic flux density 10 Gauss = 1mT 4 Absolute Maximum Ratings Parameter Supply Voltage Supply Current Output Voltage VOUT Output Current IOUT Operating Temperature Range Storage Temperature Range ESD Sensitivity - HBM 1 ESD Sensitivity - MM 2 Table 1 Absolute maximum ratings Value 5 10 -40 to 85 -50 to 150 8000 800 Units V mA V mA °C °C V

PDF Datasheet Preview

MLX90248

Micropower & Omnipolar Hall Switch

Micropower consumption ideal for battery-powered applications Omnipolar, easy to use as output switches with both North and South pole Very High Sensitivity Hall Sensor Chopper stabilized amplifier stage Open-Drain Output Operation down to 1.5V Ultra-Thin QFN package 0.43mm max & Thin SOT23 3L both RoHS Compliant

Application Examples

Solid State Switch Handheld Wireless Handset Awake Switch Lid close sensor for battery-powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications
Ordering Information

Part No. MLX90248

Temperature Code E -40°C to 85°C E -40°C to 85°C

Package Code SE TSOT-3L LD UTQFN-6L
1 Functional Diagram
2 General Description

The MLX90248 OmnipolarTM Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.

The output transistor of the 90248 will be latched on BOP in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off BRP in the absence of a magnetic field.

Page 1 of 11

Data Sheet Jan/09

MLX90248

Micropower & Omnipolar Hall Switch

Table of Contents
1 Functional Diagram 1 2 General 1 3 Glossary of Terms 3 4 Absolute Maximum 3 5 Pin Definitions and 3 6 General Electrical Specifications 4 7 Magnetic Specifications 4 8 Outputs Behaviour vs. Magnetic 4 9 Detailed General 5 10 Unique 5 11 Performance Graphs 6

Magnetic Thresholds vs. TA 6 Magnetic Thresholds vs. VDD 6 Current Consumption vs. TA 6 Current Consumption vs. VDD 6 Consumption Period vs. TA 6 Consumption Period vs. VDD 6 Output Saturation Voltage vs. TA 7 Output Switching Characteristics 7
12 Application 7 13 Standard information regarding manufacturability of Melexis products with different soldering 8 14 ESD Precautions 8 15 Package 9

SE Package TSOT-3L 9 LD Package UTQFN-6L 10
16 11

Page 2 of 11

Data Sheet Jan/09

MLX90248

Micropower & Omnipolar Hall Switch
3 Glossary of Terms

Gauss, milliTesla mT ,

Units of magnetic flux density 10 Gauss = 1mT
4 Absolute Maximum Ratings

Parameter

Supply Voltage

Supply Current

Output Voltage

VOUT

Output Current

IOUT

Operating Temperature Range

Storage Temperature Range

ESD Sensitivity - HBM 1

ESD Sensitivity - MM 2

Table 1 Absolute maximum ratings

Value 5 10 -40 to 85 -50 to 150 8000 800

Units V mA V mA °C °C V

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Datasheet ID: MLX90248ESO 647797