PH3134-11S

PH3134-11S Datasheet

PH3134-11S

Part	Datasheet
PH3134-11S	PH3134-11S (pdf)

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PH3134-11S Radar Pulsed Power Transistor 11W, GHz, 1µs Pulse, 10% Duty • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 10 Jul 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Power Dissipation +25°C Storage Temperature Junction Temperature VCES VEBO IC PTOT TSTG Rating 60 125 -65 to +200 Units V A W °C °C Electrical Specifications TC = 25 ± 5°C Room Ambient Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 12.5mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pout = 11W Input Power Vcc = 36V, Pout = 11W Power Gain Vcc = 36V, Pout = 11W Collector Efficiency Vcc = 36V, Pout = 11W Input Return Loss Load Mismatch Tolerance Vcc = 36V, Pout = 11W Vcc = 36V, Pout = 11W Frequency F = GHz F = GHz F = GHz F = GHz F = GHz F = GHz Symbol Min BVCES ICES RTH JC VSWR-T Max Units °C/W ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel / Fax: is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are • Europe Tel / Fax • Asia/Pacific Tel / Fax:

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PH3134-11S

Radar Pulsed Power Transistor 11W, GHz, 1µs Pulse, 10% Duty
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant

M/A-COM Products Released, 10 Jul 07

Outline Drawing

Absolute Maximum Ratings at 25°C

Parameter

Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Power Dissipation +25°C Storage Temperature Junction Temperature

VCES VEBO

IC PTOT TSTG

Rating
60 125 -65 to +200

Units

V A W °C °C

Electrical Specifications TC = 25 ± 5°C Room Ambient

Parameter

Test Conditions

Collector-Emitter Breakdown Voltage IC = 12.5mA

Collector-Emitter Leakage Current VCE = 36V

Thermal Resistance

Vcc = 36V, Pout = 11W

Input Power

Vcc = 36V, Pout = 11W

Power Gain

Vcc = 36V, Pout = 11W

Collector Efficiency

Vcc = 36V, Pout = 11W

Input Return Loss Load Mismatch Tolerance

Vcc = 36V, Pout = 11W Vcc = 36V, Pout = 11W

Frequency

F = GHz F = GHz F = GHz F = GHz F = GHz F = GHz

Symbol Min

BVCES

ICES

RTH JC

VSWR-T

Max Units
°C/W

ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel / Fax:
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PH3134-11S Datasheet file may be downloaded here without warranties.

Datasheet ID: PH3134-11S 646910