IXTP3N100P
IXTP3N100P Datasheet
IXTA3N100P IXTH3N100P IXTP3N100P
| Part | Datasheet |
|---|---|
IXTP3N100P |
IXTP3N100P (pdf) |
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| Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTH3N100P IXTP3N100P VDSS = ID25 = RDS on 1000V 3A TO-263 IXTA VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150°C TC = 25°C 1.6mm from case for 10s Plastic body for 10s Mounting torque TO-220 TO-263 TO-220 TO-247 Test Conditions TJ = 25°C, unless otherwise specified BVDSS VGS = 0V, ID = 250uA VGS th VDS = VGS, ID = 250uA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS on VGS = 10V, ID = • ID25, Note 1 2007 IXYS CORPORATION, All rights reserved Maximum Ratings 1000 1000 ±20 ±30 -55 +150 -55 +150 |
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