MAPG-002729-350L00

MAPG-002729-350L00 Datasheet

MAPG-002729-350L00

Part	Datasheet
MAPG-002729-350L00	MAPG-002729-350L00 (pdf)

PDF Datasheet Preview
MAPG-002729-350L00 S-Band 350 W Radar Pulsed Power GaN Pallet 2700 - 2900 MHz • Output Power > 350 W, with dB Gain and 50% Drain Efficiency • x Inches x 23 mm2 Size • Weight 19 Grams • Nickel Plated Aluminum Carrier • +50 V Operation • Input and Output Matched to 50 Ω • RO4003C Substrate εR = Circuit Board • True Standard SMT Assembly • Single Gate and Drain Bias • Dual GaN on SiC High Power Transistors • Enhanced Harmonic Rejection • MTTF = 600 years TJ < 200ºC • RoHS* Compliant. Lead Free Reflow Compatible The MAPG-002729-350L00 is a common-source, Class AB, S-band GaN pallet power amplifier. The pallet is comprised of a matched pair of discrete GaN on SiC high power transistors which are combined to produce a guaranteed 350 W peak pulsed power and 35 W average power. The GaN pallet has excellent harmonic rejection and robust operation under a wide range of environmental conditions. The pallet is constructed by combining a laminate board RO4003C with an aluminum carrier to allow for true standard SMT assembly. The compact size of the integrated pallet, combined with excellent RF performance makes this product an ideal solution for pulsed radar and medical applications where small size, light weight and high power performance SWaP are required. MAPG-002729-350L00 Functional Schematic1, 2 Gate Bias 5 - 4 + +50V - Pin Configuration3 Pin No. 1 2 3 4 5 Function RF Input RF Output Gate Bias Voltage1 VGG Drain Bias Voltage2 VDD Ordering Information Part Number MAPG-002729-350L00 MAPG-S22729-350L00 Package Bulk Packaging Sample Board * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. One common gate voltage for both transistors. One common drain voltage for both transistors. The exposed pad centered on the package bottom must be connected to RF and DC ground. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAPG-002729-350L00 S-Band 350 W Radar Pulsed Power GaN Pallet 2700 - 2900 MHz Electrical Specifications4 2700 - 2900 MHz, TA = 25°C, ZL = 50 Ω Parameter Test Conditions Symbol Min. RF Functional Tests VDD = 50 V, IDQ = 500 mA, 300 µs Pulse, 10% Duty Cycle Output Power PIN = 32 Wpk POUT Gain PIN = 32 Wpk Drain Efficiency PIN = 32 Wpk Droop PIN = 32 Wpk Droop Input Return Loss PIN = 32 Wpk 2ND Harmonic PIN = 32 Wpk 3RD Harmonic PIN = 32 Wpk Load Mismatch Stability PIN = 32 Wpk VSWR-S - Load Mismatch Tolerance PIN = 32 Wpk VSWR-T - Typical RF performance measured in RF evaluation board see test fixture assembly on page Absolute Maximum Ratings 5,6,7,8 Typ. 400 50 -20 - 50 - 30 5:1 10:1

PDF Datasheet Preview

MAPG-002729-350L00

S-Band 350 W Radar Pulsed Power GaN Pallet 2700 - 2900 MHz
• Output Power > 350 W, with dB Gain and 50% Drain Efficiency
• x Inches x 23 mm2 Size
• Weight 19 Grams
• Nickel Plated Aluminum Carrier
• +50 V Operation
• Input and Output Matched to 50 Ω
• RO4003C Substrate εR = Circuit Board
• True Standard SMT Assembly
• Single Gate and Drain Bias
• Dual GaN on SiC High Power Transistors
• Enhanced Harmonic Rejection
• MTTF = 600 years TJ < 200ºC
• RoHS* Compliant. Lead Free Reflow

Compatible

The MAPG-002729-350L00 is a common-source, Class AB, S-band GaN pallet power amplifier. The pallet is comprised of a matched pair of discrete GaN on SiC high power transistors which are combined to produce a guaranteed 350 W peak pulsed power and 35 W average power.

The GaN pallet has excellent harmonic rejection and robust operation under a wide range of environmental conditions. The pallet is constructed by combining a laminate board RO4003C with an aluminum carrier to allow for true standard SMT assembly.

The compact size of the integrated pallet, combined with excellent RF performance makes this product an ideal solution for pulsed radar and medical applications where small size, light weight and high power performance SWaP are required.

MAPG-002729-350L00

Functional Schematic1, 2

Gate Bias 5 -
4 + +50V -

Pin Configuration3

Pin No.
1 2 3 4 5

Function

RF Input RF Output Gate Bias Voltage1 VGG Drain Bias Voltage2 VDD
Ordering Information

Part Number MAPG-002729-350L00 MAPG-S22729-350L00

Package Bulk Packaging Sample Board
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

One common gate voltage for both transistors. One common drain voltage for both transistors. The exposed pad centered on the package bottom must be
connected to RF and DC ground.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAPG-002729-350L00

S-Band 350 W Radar Pulsed Power GaN Pallet 2700 - 2900 MHz

Electrical Specifications4 2700 - 2900 MHz, TA = 25°C, ZL = 50 Ω

Parameter

Test Conditions

Symbol Min.

RF Functional Tests VDD = 50 V, IDQ = 500 mA, 300 µs Pulse, 10% Duty Cycle

Output Power

PIN = 32 Wpk

POUT

Gain

PIN = 32 Wpk

Drain Efficiency

PIN = 32 Wpk

Droop

PIN = 32 Wpk

Droop

Input Return Loss

PIN = 32 Wpk
2ND Harmonic

PIN = 32 Wpk
3RD Harmonic

PIN = 32 Wpk

Load Mismatch Stability

PIN = 32 Wpk

VSWR-S -

Load Mismatch Tolerance

PIN = 32 Wpk

VSWR-T -

Typical RF performance measured in RF evaluation board see test fixture assembly on page

Absolute Maximum Ratings 5,6,7,8

Typ.
400 50 -20 - 50 - 30 5:1 10:1

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAPG-002729-350L00 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAPG-002729-350L00 646893