HUF75344A3
HUF75344A3 Datasheet
HUF75344A3 N-Channel UltraFET Power MOSFET
| Part | Datasheet |
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HUF75344A3 |
HUF75344A3 (pdf) |
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| HUF75344A3 N-Channel UltraFET Power MOSFET October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, • RDS on = VGS = 10V, ID = 75A • RoHS compliant TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise noted Parameter VDSS VGSS ID IDM EAS Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 130oC - Pulsed Single Pulsed Avalanche Energy Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient G Note 1 Ratings 55 ±20 75 300 1153 -55 to +175 300 Ratings 40 Units V A mJ W W/oC Units oC/W 2007 Fairchild Semiconductor Corporation HUF75344A3 N-Channel UltraFET Power MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking HUF75344A3 Device HUF75344A3 Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TJ = 150oC VGS = ±20V, VDS = 0V On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250µA VGS = 10V, ID = 75A Dynamic Characteristics Ciss Coss Crss Qg tot Qg 10 Qg th Qgs Qgd VDS = 25V, VGS = 0V f = 1MHz VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDS = 30V ID = 75A Ig = 1mA Switching Characteristics tON td on tr td off tf tOFF Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 30V, ID = 75A VGS =10V, RGEN = Drain-Source Diode Characteristics Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/µs Notes 1 L = 0.41mH, IAS = 75A, VDD = 50V, VGS = 10V, RG = Starting TJ = 25oC Min. Typ. 3650 980 135 160 86 |
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