MAGX-001214-SB1PPR

MAGX-001214-SB1PPR Datasheet

MAGX-001214-250L00

Part	Datasheet
MAGX-001214-SB1PPR	MAGX-001214-SB1PPR (pdf)

Related Parts	Information
MAGX-001214-250L00	MAGX-001214-250L00

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MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260 °C Reflow Compatible • +50 V Typical Operation • MTTF = 600 years TJ < 200 °C • L-Band pulsed radar The MAGX-001214-250L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number MAGX-001214-250L00 250W GaN Power Transistor MAGX-001214-SB1PPR Evaluation Test Fixture Typical RF Performance under Standard Operating Conditions, POUT = 250 W Peak Freq Gain Eff. Droop VSWR-S VSWR-T 10:1 1200 1250 1300 1350 1400 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Electrical Specifications Freq. = 1200 - 1400 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power Power Gain VDD = 50 V, IDQ = 250 mA, Drain Efficiency Pulse Width = 300 us, Duty Cycle = 10%, Load Mismatch Stability POUT = 250 W Peak 25 W avg. VSWR-S 5:1 Load Mismatch Tolerance VSWR-T 10:1 Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics

PDF Datasheet Preview

MAGX-001214-250L00

GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
• GaN on SiC Depletion-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• RoHS* Compliant and 260 °C Reflow Compatible
• +50 V Typical Operation
• MTTF = 600 years TJ < 200 °C
• L-Band pulsed radar

The MAGX-001214-250L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information

Part Number MAGX-001214-250L00
250W GaN Power Transistor

MAGX-001214-SB1PPR Evaluation Test Fixture

Typical RF Performance under Standard Operating Conditions, POUT = 250 W Peak

Freq

Gain

Eff.

Droop VSWR-S VSWR-T
10:1
1200
1250
1300
1350
1400
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-001214-250L00

GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty

Electrical Specifications Freq. = 1200 - 1400 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF Functional Tests

Peak Input Power

Power Gain

VDD = 50 V, IDQ = 250 mA,

Drain Efficiency

Pulse Width = 300 us, Duty Cycle = 10%,

Load Mismatch Stability

POUT = 250 W Peak 25 W avg.

VSWR-S 5:1

Load Mismatch Tolerance

VSWR-T 10:1

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage

Forward Transconductance Dynamic Characteristics

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-001214-SB1PPR Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-001214-SB1PPR 646882