IRGR4045DPbF
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IRGR4045DTRRPBF (pdf) |
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IRGR4045DPBF |
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IRGR4045DTRPBF |
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IRGR4045DTRLPBF |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5us SCSOA • Square RBSOA • 100% of the parts tested for • Positive VCE on Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE ON and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI IRGR4045DPbF n-channel VCES = 600V IC 6.0A, TC = 100°C Tjmax = 175°C VCE on typ. 1.7V G Gate E G D-Pak IRGR4045DPbF C Colletor E Emitter Absolute Maximum Ratings Parameter VCES TC = 25°C TC = 100°C ICM ILM IFM Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current c Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current d Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC =25° PD TC =100° TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter e Junction-to-Case - IGBT e Junction-to-Case - Diode g Junction-to-Ambient PCB Mount Junction-to-Ambient *Qualification standards can be found at Max. 600 12 18 24 ± 20 ± 30 77 39 -55 to + 175 Units V V W °C 300 in. 1.6mm from case Min. Typ. Max. 50 110 Units °C/W October 10, 2012 IRGR4045DPbF Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V B R CE S |
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