IRGR4045DTRRPBF

IRGR4045DTRRPBF Datasheet


IRGR4045DPbF

Part Datasheet
IRGR4045DTRRPBF IRGR4045DTRRPBF IRGR4045DTRRPBF (pdf)
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features
• Low VCE on Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5us SCSOA
• Square RBSOA
• 100% of the parts tested for
• Positive VCE on Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant

Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE ON and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI

IRGR4045DPbF
n-channel

VCES = 600V IC 6.0A, TC = 100°C

Tjmax = 175°C VCE on typ. 1.7V

G Gate

E G D-Pak IRGR4045DPbF

C Colletor

E Emitter

Absolute Maximum Ratings

Parameter

VCES TC = 25°C TC = 100°C ICM ILM IFM

Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current
c Pulsed Collector Current, VGE = 15V

Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current
d Diode Continuous Forward Current

Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage

PD TC =25° PD TC =100° TJ TSTG

Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter
e Junction-to-Case - IGBT e Junction-to-Case - Diode g Junction-to-Ambient PCB Mount

Junction-to-Ambient
*Qualification standards can be found at

Max. 600 12 18 24 ± 20 ± 30 77 39
-55 to + 175

Units V

V W °C
300 in. 1.6mm from case

Min.

Typ.

Max. 50 110

Units °C/W

October 10, 2012

IRGR4045DPbF

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

V B R CE S
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Datasheet ID: IRGR4045DTRRPBF 638363