BFS 469L6 E6327
BFS 469L6 E6327 Datasheet
BFS469L6
| Part | Datasheet |
|---|---|
BFS 469L6 E6327 |
BFS 469L6 E6327 (pdf) |
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| NPN Silicon RF TWIN Transistor Preliminary data • Low voltage/ low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure TR1 1.1dB at GHz TR2 dB at GHz • World's smallest SMD 6-pin leadless package • Built in 2 transitors TR1 die as BFR460L3, TR2 die as BFR949L3 BFS469L6 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS469L6 Marking Pin Configuration Package 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Collector-emitter voltage TR1 TR2 Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 Symbol VCEO VCES VCBO VEBO IC Value 15 20 15 20 50 70 Unit V Sep-01-2003 BFS469L6 Maximum Ratings Parameter Base current TR1 TR2 Total power dissipation1 TR1, TS 104°C TR2, TS 100°C Junction temperature TR1 TR2 Symbol IB Ptot Value 200 250 Ambient temperature TR1 TR2 TA -65 150 -65 150 Storage temperature TR1 TR2 Tstg -65 150 -65 150 Thermal Resistance Parameter Junction - soldering point2 TR1 TR2 Symbol RthJS Value 230 200 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Unit mA mW °C Unit K/W Sep-01-2003 BFS469L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit |
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