MAGX-000912-500L0S
MAGX-000912-500L0S Datasheet
MAGX-000912-500L0x
| Part | Datasheet |
|---|---|
MAGX-000912-500L0S |
MAGX-000912-500L0S (pdf) |
| Related Parts | Information |
|---|---|
MAGX-A00912-500L00 |
MAGX-A00912-500L00 |
MAGX-000912-500L00 |
MAGX-000912-500L00 |
| PDF Datasheet Preview |
|---|
| MAGX-000912-500L0x GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 us Pulse, 10% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260 °C Reflow Compatible • +50 V Typical Operation • MTTF = 600 years TJ < 200 °C • Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S Avionics. • Military radar for IFF and Data Links. MAGX-000912-500L00 MAGX-000912-500L0S The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information1 MAGX-000912-500L00 Flanged MAGX-000912-500L0S Flangeless MAGX-A00912-500L00 960 - 1215 MHz Evaluation Board When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices Typical RF Performance under standard operating conditions, POUT = 500 W Peak Freq Gain Eff. Droop +1dB OD VSWR-S VSWR-T 1025 1090 1150 1215 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000912-500L0x GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 us Pulse, 10% Duty Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power Power Gain Drain Efficiency Pulse Droop VDD = 50 V, IDQ = 400 mA, Pulse Width = 128 us, Duty Cycle = 10%, POUT = 500 W Peak 50 W avg. Droop Load Mismatch Stability VSWR-S - Load Mismatch Tolerance VSWR-T - Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 75 mA VDS = 5 V, ID = mA Input Capacitance Not applicable - Input matched VDS = 50 V, VGS = -8 V, Freq. = 1 MHz |
| More datasheets: BHA.3K.100.EAN | KA741D | KA741I | KA741DTF | KA741 | V386GLFT | V386GT | V386G | V386GLF | DEM-9P-L-NMBK52 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000912-500L0S Datasheet file may be downloaded here without warranties.