MAGX-000912-500L00

MAGX-000912-500L00 Datasheet

MAGX-000912-500L0x

Part	Datasheet
MAGX-000912-500L00	MAGX-000912-500L00 (pdf)

Related Parts	Information
MAGX-000912-500L0S	MAGX-000912-500L0S
MAGX-A00912-500L00	MAGX-A00912-500L00

PDF Datasheet Preview
MAGX-000912-500L0x GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 us Pulse, 10% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260 °C Reflow Compatible • +50 V Typical Operation • MTTF = 600 years TJ < 200 °C • Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S Avionics. • Military radar for IFF and Data Links. MAGX-000912-500L00 MAGX-000912-500L0S The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information1 MAGX-000912-500L00 Flanged MAGX-000912-500L0S Flangeless MAGX-A00912-500L00 960 - 1215 MHz Evaluation Board When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices Typical RF Performance under standard operating conditions, POUT = 500 W Peak Freq Gain Eff. Droop +1dB OD VSWR-S VSWR-T 1025 1090 1150 1215 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000912-500L0x GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 us Pulse, 10% Duty Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power Power Gain Drain Efficiency Pulse Droop VDD = 50 V, IDQ = 400 mA, Pulse Width = 128 us, Duty Cycle = 10%, POUT = 500 W Peak 50 W avg. Droop Load Mismatch Stability VSWR-S - Load Mismatch Tolerance VSWR-T - Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 75 mA VDS = 5 V, ID = mA Input Capacitance Not applicable - Input matched VDS = 50 V, VGS = -8 V, Freq. = 1 MHz

PDF Datasheet Preview

MAGX-000912-500L0x

GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 us Pulse, 10% Duty
• GaN on SiC Depletion-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• RoHS* Compliant and 260 °C Reflow Compatible
• +50 V Typical Operation
• MTTF = 600 years TJ < 200 °C
• Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S Avionics.
• Military radar for IFF and Data Links.

MAGX-000912-500L00 MAGX-000912-500L0S

The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.
Ordering Information1

MAGX-000912-500L00

Flanged

MAGX-000912-500L0S

Flangeless

MAGX-A00912-500L00
960 - 1215 MHz Evaluation Board
When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices

Typical RF Performance under standard operating conditions, POUT = 500 W Peak

Freq

Gain

Eff.

Droop +1dB OD VSWR-S VSWR-T
1025
1090
1150
1215
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000912-500L0x

GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 us Pulse, 10% Duty

Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF Functional Tests

Peak Input Power

Power Gain

Drain Efficiency Pulse Droop

VDD = 50 V, IDQ = 400 mA,

Pulse Width = 128 us, Duty Cycle = 10%,

POUT = 500 W Peak 50 W avg.

Droop

Load Mismatch Stability

VSWR-S -

Load Mismatch Tolerance

VSWR-T -

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage

Forward Transconductance Dynamic Characteristics

VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 75 mA VDS = 5 V, ID = mA

Input Capacitance

Not applicable - Input matched

VDS = 50 V, VGS = -8 V, Freq. = 1 MHz

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000912-500L00 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000912-500L00 646877