MAGX-000035-01000P

MAGX-000035-01000P Datasheet

MAGX-000035-01000P

Part	Datasheet
MAGX-000035-01000P	MAGX-000035-01000P (pdf)

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MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - GHz • GaN on SiC D-Mode Transistor Technology • Unmatched, Ideal for Pulsed / CW Applications • 50 V Typical Bias, Class AB • Common-Source Configuration • Thermally-Enhanced 3 x 6 mm 14-Lead DFN • MTTF = 600 years TJ < 200°C • Halogen-Free “Green” Mold Compound • RoHS* Compliant and 260°C Reflow Compatible • MSL-1 The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Ordering Information1 Package Functional Schematic 12 34 56 7 NC GG 15 DD MAGX-000035-01000P Bulk Packaging MAGX-000035-0100TP 500 Piece Reel MAGX-L20035-01000P MAGX-000035-PB4PPR 900 - 1400 MHz Sample Board Custom Sample Board2 Reference Application Note M513 for reel size information. When ordering this sample evaluation board, choose a standard frequency range indicated on page 4/5 or specify a desired custom range. Custom requests may increase lead times. 14 13 12 11 10 9 Pin Configuration3 Pin No. Function Pin No. 8 Function No Connection No Connection No Connection No Connection VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT No Connection No Connection * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. No Connection No Connection Paddle4 MACOM recommends connecting unused package pins to ground. The exposed pad centered on the package bottom must be connected to RF and DC ground. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - GHz Typical Performance VDD = 50 V, IDQ = 30 mA, TA = 25°C Parameter 30 MHz 1 GHz Gain Saturated Power PSAT Power Gain at PSAT PAE PSAT GHz 14 10 13 53 GHz 14 10 12 50 Units dB W dB % Electrical Specifications5 Freq. = GHz, TA = 25°C, Z0 = 50 Ω Parameter

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MAGX-000035-01000P

GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - GHz
• GaN on SiC D-Mode Transistor Technology
• Unmatched, Ideal for Pulsed / CW Applications
• 50 V Typical Bias, Class AB
• Common-Source Configuration
• Thermally-Enhanced 3 x 6 mm 14-Lead DFN
• MTTF = 600 years TJ < 200°C
• Halogen-Free “Green” Mold Compound
• RoHS* Compliant and 260°C Reflow Compatible
• MSL-1

The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.

Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components.
Ordering Information1

Package

Functional Schematic
12 34 56 7

NC GG
15 DD

MAGX-000035-01000P

Bulk Packaging

MAGX-000035-0100TP
500 Piece Reel

MAGX-L20035-01000P MAGX-000035-PB4PPR
900 - 1400 MHz Sample Board

Custom Sample Board2
Reference Application Note M513 for reel size information. When ordering this sample evaluation board, choose a
standard frequency range indicated on page 4/5 or specify a desired custom range. Custom requests may increase lead times.
14 13 12 11 10 9

Pin Configuration3

Pin No. Function Pin No.
8 Function

No Connection

No Connection

No Connection

No Connection

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

No Connection

No Connection
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

No Connection

No Connection

Paddle4

MACOM recommends connecting unused package pins to ground.

The exposed pad centered on the package bottom must be connected to RF and DC ground.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000035-01000P

GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - GHz

Typical Performance VDD = 50 V, IDQ = 30 mA, TA = 25°C

Parameter
30 MHz
1 GHz

Gain

Saturated Power PSAT

Power Gain at PSAT

PAE PSAT

GHz 14 10 13 53

GHz 14 10 12 50

Units dB W dB %

Electrical Specifications5 Freq. = GHz, TA = 25°C, Z0 = 50 Ω

Parameter

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000035-01000P Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000035-01000P 646865