PN4117A_J61Z

PN4117A_J61Z Datasheet

PN4117A

Part	Datasheet
PN4117A_J61Z	PN4117A_J61Z (pdf)

Related Parts	Information
PN4117A	PN4117A
PN4117A_D26Z	PN4117A_D26Z

PDF Datasheet Preview
PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process TO-92 Drain Source Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TSTG Operating and storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Value 40 -40 50 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA °C Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdown Voltage VGS off Gate-Source Cutoff Voltage IGSS On Characteristics VDS = 0, IG = -1µA VDS = -10V, ID = 1.0nA VDS = 0V, VGS = -20V IDSS Zero-Gate Voltage Drain Current * Small Signal Characteristics VDS = 10V, VGS = 0 Common Source Forward Transconductance VDS = 10V, VGS = 0 f = 1.0KHz gOSS Common Source Output Conductance VDS = 10V, VGS = 0 f = 1KHz RE YFS Common Source Forward Conductance VDS = 10V, VGS = 0 f = 30MHz CISS

PDF Datasheet Preview

PN4117A

PN4117A

N-Channel Switch
• This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources.
• Sourced from process

TO-92

Drain Source Gate

Absolute Maximum Ratings * TA=25°C unless otherwise noted

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

TSTG

Operating and storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

Value 40 -40 50
- 55 ~ 150

NOTES These ratings are based on a maximum junction temperature of 150degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units V mA °C

Electrical Characteristics TA=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdown Voltage

VGS off Gate-Source Cutoff Voltage

IGSS

On Characteristics

VDS = 0, IG = -1µA VDS = -10V, ID = 1.0nA VDS = 0V, VGS = -20V

IDSS

Zero-Gate Voltage Drain Current *

Small Signal Characteristics

VDS = 10V, VGS = 0

Common Source Forward Transconductance VDS = 10V, VGS = 0
f = 1.0KHz
gOSS

Common Source Output Conductance

VDS = 10V, VGS = 0 f = 1KHz

RE YFS

Common Source Forward Conductance

VDS = 10V, VGS = 0 f = 30MHz

CISS

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Datasheet ID: PN4117A_J61Z 634497