JANTXV2N6678
JANTXV2N6678 Datasheet
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538
| Part | Datasheet |
|---|---|
JANTXV2N6678 |
JANTXV2N6678 (pdf) |
| PDF Datasheet Preview |
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| NPN High Power Silicon Transistors 2N6676 & 2N6678 • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 • TO-3 TO-204AA Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation TA = +25 °C 1 TA = +25 °C Operating & Storage Temperature Range Symbol VCEO VCBO VCEX VEBO IB IC PT Top, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case 1 Derate linearly mW/°C for TA > +25°C 2N6676 300 2N6678 400 -65 to +200 Maximum Units Vdc Adc W °C Units °C/W Electrical Characteristics OFF Characteristics Collector - Emitter Breakdown Voltage IC = 200 mAdc 2N6676 2N6678 Collector - Emitter Cutoff Current VCE = 450 Vdc, VBE = Vdc VCE = 650 Vdc, VBE = Vdc Emitter - Base Cutoff Current VEB = Vdc Collector - Base Cutoff Current VCB = 450 Vdc VCB = 650 Vdc 2N6676 2N6678 2N6676 2N6678 Symbol V BR CEO ICEX Mimimum 300 400 Maximum --- Units Vdc uAdc |
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