BSO612CV
BSO612CV Datasheet
BSO 612 CV
| Part | Datasheet |
|---|---|
BSO612CV |
BSO612CV (pdf) |
| PDF Datasheet Preview |
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| Preliminary data BSO 612 CV Small-Signal-Transistor Features • Dual N- and P -Channel • Enhancement mode • Avalanche rated • dv/dt rated Product Summary Drain source voltage Drain-Source on-state resistance RDS on Continuous drain current ID P -60 V Type Package BSO 612 CV SO 8 Ordering Code Q67041-S4015 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value ±20 ±20 55/150/56 Unit A kV/µs V W °C 1999-09-22 Preliminary data BSO 612 CV Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point Pin 4 SMD version, device on PCB min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec. min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec. Values Unit min. typ. max. N RthJS - 40 K/W RthJA - 110 Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain- source breakdown voltage V BR DSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS ID = 20 µA ID = -450 µA VGS th Zero gate voltage drain current VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V IGSS Drain-Source on-state resistance VGS = 10 V, ID = 3 A VGS = -10 V , ID = -2 A RDS on 34 -3 -4 µA 1 10 100 -1 -10 -100 nA 10 100 -10 -100 |
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