APTM10TDUM19PG

APTM10TDUM19PG Datasheet

APTM10TDUM19PG

Part	Datasheet
APTM10TDUM19PG	APTM10TDUM19PG (pdf)

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APTM10TDUM19PG Triple dual common source MOSFET Power Module VDSS = 100V RDSon = typ Tj = 25°C ID = 70A Tc = 25°C Application • AC Switches • Switched Mode Power Supplies S3 S 1/ S2 S5 S3/ S4 S5/ S6 • Uninterruptible Power Supplies S2 G2 S4 G4 S6 G6 Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration S1/S 2 S3/S 4 S5/S6 • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting G2 D2 G4 D4 G6 D6 • Very low 12mm profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM10TDUM19PG

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APTM10TDUM19PG

Triple dual common source

MOSFET Power Module

VDSS = 100V RDSon = typ Tj = 25°C ID = 70A Tc = 25°C

Application
• AC Switches
• Switched Mode Power Supplies

S3 S 1/ S2

S5 S3/ S4

S5/ S6
• Uninterruptible Power Supplies

S2 G2

S4 G4

S6 G6

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• High level of integration

S1/S 2

S3/S 4

S5/S6
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting

G2 D2

G4 D4

G6 D6
• Very low 12mm profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
1500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM10TDUM19PG

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Datasheet ID: APTM10TDUM19PG 648866